240OHM Search Results

PLT10HH

Abstract: DLM11GN601SD2 DLP11SN900HL2 PLT10HH1026R0PN DLP31SN551 PLT10HH401100PN DLP31SN121ML2 DLW5B DLP0NSN670 DLP31SN551ML2
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

BLM03BC800SN1

Abstract: BLM03BD750SN1 BLM03BC330SN1 BLM03BC BLM03BB750SN1 BLM03BC330SN BLM03BD241SN1 BLM03BB121SN1
Contextual Info: Noise Suppression Products/EMI Suppression Filters > EMIFILr Inductor type > Chip Ferrite Bead Data Sheet 1 EMIFILr (Inductor type) Chip Ferrite Bead BLM03B Series (0201 Size) • Dimensions ■ Equivalent Circuit 0.3±0.03 0.3±0.03 0.6±0.03 0.15±0.05

DLP11SN900HL2

Abstract: DLP11SN241HL2 DLP11SA900HL2 DLP11SA DLP11SN DLP11SN121SL2 DLP11SN161SL2 DLP11SN201HL2
Contextual Info: Noise Suppression Products/EMI Suppression Filters > Common Mode Choke Coil > Film Type Data Sheet 1 Common Mode Choke Coil Film Type DLP11S Series 0504 Size • Dimensions ■ Equivalent Circuit (1) 0.55±0.1 (2) (3) (4) (1) (2) (4) (3) 1.0±0.1 0.82±0.1

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

nRF24Z1

Abstract: nRF24Z1-EVB CS5333 eeprom programmer usb male connector pcb mounted nRF24Z1-EVKIT J101 J102 nRF24Z1-EVBOARD N-7075
Contextual Info: USER MANUAL nRF24Z1 Evaluation board 1. nRF24Z1-EVB General description This document describes the nRF24Z1-EVBOARD and its use with the Nordic Semiconductor nRF24Z1 Single Chip 2.4 GHz RF Audio streamer. Figure 1: The nRF24Z1-EVBOARD There are two versions of the nRF24Z1-EVBOARD. One is fitted with the nRF24Z1 in audio

intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: PC MOTHERBOARD intel 845 circuit diagram PC 845 MOTHERBOARD CIRCUIT diagram PC 845 MOTHERBOARD SERVICE MANUAL intel 845 MOTHERBOARD SERVICE MANUAL intel pentium 4 motherboard schematic diagram pentium 4 motherboard CIRCUIT diagram intel 8086 pentium MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram
Contextual Info: D Pentium II Processor Developer’s Manual 243502-001 October 1997 1997 10/20/97 9:21 AM FM.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

NT5CB64M16AP-CF

Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Contextual Info: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )

5V unipolar STEPPER MOTOR TRANSISTOR DRIVER

Abstract: bilevel stepper ic RGPP10G RGPP30D 1N4001 BYV27
Contextual Info: February 1999 PBD 3517/1 Stepper Motor Drive Circuit Description Key Features PBD 3517/1 is a bipolar, monolithic, integrated circuit, intended to drive a stepper motor in a unipolar, bilevel way. One PBD 3517/1 and a minimum of external components form a complete control

Contextual Info: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only HIGH VOLTAGE LED LAMPS LG2040/HV5 DATA SHEET DOC. NO : QW0905-:LG2040/HV5 REV : A DATE : 23 - Jun - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LG2040/HV5 Page 1/4 Package Dimensions

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only RECTANGLE TYPE LED LAMPS Pb Lead-Free Parts LY75341/S2-PF DATA SHEET DOC. NO : QW0905- LY75341/S2-PF REV. : A DATE : 25 - May - 2007 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO.LY75341/S2-PF

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only HIGH VOLTAGE LED LAMPS Pb Lead-Free Parts LG75240/HV5-PF DATA SHEET DOC. NO : QW0905- LG75240/HV5-PF REV : A DATE : 28 - Feb - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LG75240/HV5-PF

DIAC DB3

Abstract: diac DB3 application note STW14NK50 BYV52-200 opto diac asymmetrical half bridge controller ROE EYS 06 ROE capacitor EYS asymmetrical half bridge converter AN1621
Contextual Info: AN1621 APPLICATION NOTE 300W SECONDARY CONTROLLED TWO-SWITCH FORWARD CONVERTER WITH L5991A 1 INTRODUCTION A typical off-line isolated switch-mode power supply has the controller located on the primary side of the transformer, whereas the output voltages to be controlled and the housekeeping functions are located on the secondary side. Usually the voltage feedback signal is transferred to the primary controller by using an optocoupler

NT5CB256

Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

vectron crystal oscillator

Abstract: J-STD-020B 60.0000 oscillator vectron xo
Contextual Info: VCC6-Q Series 3.3 volt LVPECL Crystal Oscillator, Output Frequencies > 270MHz Features • 3.3V LVPECL • Output frequencies from 270 to 800 MHz • Enable/Disable for test and board debug • -10/70 or –40/85 °C operating temperature • Hermetically sealed ceramic SMD package

K4B4G0846C

Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Contextual Info: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B4G0846B-HYK0

Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Contextual Info: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B4G0846a

Contextual Info: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

k4b2g0446d-hyh9

Contextual Info: Rev. 1.01, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B1G1646G

Abstract: K4B1G1646G-BI samsung dimm DDR3 SPD k4b1g1646g
Contextual Info: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B2G1646B

Abstract: Samsung 2GB DDR3 K4B2G1646B-HI
Contextual Info: industrial 2Gb DDR3 SDRAM K4B2G1646B 2Gb B-die DDR3 SDRAM Specification 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant Industrial Temp. -40 to 95°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4B1G0846G-BYH9

Contextual Info: Rev. 1.03, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3L SDRAM 78 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed