EHA07 Search Results

Pin diode G4S

Abstract: marking g4s Q62702-A1261
Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>

mmic-amplifier

Abstract: VPS05178 337 BGA
Contextual Info: BGA 312 Silicon Bipolar MMIC-Amplifier 3
Cascadable 50 -gain block
11 dB typical gain at 1.0 GHz 4
9 dBm typical P -1dB at 1.0 GHz
3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312

Contextual Info: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings

Contextual Info: SIEMENS BXY 42BA-6 Silicon PIN Diode • Fast switching • Coax package * E SD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering C ode Pin Configuration Package* B X Y 42BA-6 - Q62702-X146 Í D ki o EHA07001

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR142W

Abstract: VSO05561
Contextual Info: BCR142W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR112W

Abstract: VSO05561
Contextual Info: BCR112W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323

marking WPs

Abstract: BCR192T SC75
Contextual Info: BCR192T PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75

BCR141T

Abstract: SC75
Contextual Info: BCR141T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75

BCR583

Contextual Info: BCR583 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR583 XMs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR198W

Abstract: VSO05561 MARKING WRS
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR146W

Abstract: VSO05561
Contextual Info: BCR146W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR553

Contextual Info: BCR553 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR148T

Abstract: SC75
Contextual Info: BCR148T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR148T WEs Pin Configuration 1=B 2=E Package 3=C SC75

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

SOT143 DUAL DIODE

Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
Contextual Info: BAT15-099 Silicon Dual Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration

BAS40-04W

Abstract: BAS40-05W BAS40-06W VSO05561
Contextual Info: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection 2
Voltage clamping
High-level detecting and mixing BAS40-04W 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 EHA07005 VSO05561 2 1 2 EHA07006 EHA07004

BF1005SR

Abstract: BF1005 BF1005S BF1005SW
Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

wns marking

Abstract: BCR185W VSO05561
Contextual Info: BCR185W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323

bat18 a2

Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s