EDO SIMM Search Results

HYM532814

Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Contextual Info: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .

8mx32 simm 72 pin

Abstract: 8Mx32 dram simm 4Mx4 dram simm 328006ES52T16JD simm EDO 72pin
Contextual Info: 8M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 328006ES52T16JD 72 Pin 8Mx32 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Extended Dataout (EDO) access.

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

16m x 36 60ns simm

Contextual Info: 16M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 361656ES54m16TL 72 Pin 16Mx36 ECC EDO SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656ES54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4

MT41LC256K32D4

Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
Contextual Info: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏

T2D 53

Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Contextual Info: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by

edo dram 50ns 72-pin simm

Abstract: UG232W3264HSG
Contextual Info: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO

Contextual Info: UG232W3264HSG-6 Data sheets can be downloaded at www.unigen.com 128M Bytes 32M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG-6 is a 32Mbits x 32 EDO

4Mx4 dram simm

Abstract: 8m x 36 60ns simm
Contextual Info: 8M x 36 Bit 5V ECC EDO SIMM Extended Data Out EDO ECC DRAM SIMM 368056ES52m18JD 72 Pin 8Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V, ECC Mode Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11

simm EDO 72pin

Abstract: DS512 16MX32 321606ES54T15TD "24 pin" DRAM
Contextual Info: 16M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 321606ES54T15TD 72 Pin 16Mx32 EDO SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1

321006ES51T02JF

Abstract: DS361-40 simm EDO 72pin
Contextual Info: 1M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 321006ES51T02JF 72 Pin 1Mx32 EDO SIMM Unbuffered, 1k Refresh, 5V General Description Pin Assignment The module is a 1Mx32 bit, 2 chip, 5V, 72 Pin SIMM module consisting of (2) 1Mx16 (SOJ) DRAM. The module is unbuffered and supports Extended Data

64Mx4

Contextual Info: 16Mx32, 50 - 70ns, SIMM 30A173-11 2 M-Densus High Density Memory Device 512 Megabit CMOS 3.3V EDO DRAM 256 Megabit CMOS 3.3V EDO DRAM 128 Megabit CMOS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family

4Mx4 dram simm

Abstract: 4MX36 simm 72 pin edo
Contextual Info: 4M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 364056ES52m09JB 72 Pin 4Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1

Contextual Info: 8M x 36 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 368006ES52m24JL 72 Pin 8Mx36 EDO SIMM Unbuffered, 1k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 PD5 12 A0 13 A1 14

KVR4X32-60ET/16

Contextual Info: Memory Module Specification KVR4X32-60ET/16 72-Pin SIMM EDO Memory Module DESCRIPTION: This document describes ValueRAM's 4M x 32-bit 16MB EDO (Extended Data Output) 72Pin SIMM (Single In-line Memory Module). The components on this module include eight 4M

VALUERAM0047-001

Contextual Info: Memory Module Specification KVR8X32-60ET/32 72-Pin SIMM EDO Memory Module DESCRIPTION: This document describes ValueRAM's 8M x 32-bit 32MB EDO (Extended Data Output) 72Pin SIMM (Single In-line Memory Module). The components on this module include sixteen

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

DT38

Abstract: 1995 SDRAM
Contextual Info: TN-04-38 WHAT IS BURST EDO? TECHNOLOGY, INC. TECHNICAL NOTE WHAT IS BURST EDO? INTRODUCTION Burst Extended Data-Out BEDO or pipeline nibble mode (as it has been termed by JEDEC), is basically an EDO DRAM that contains a pipeline stage and a 2-bit burst counter. This evolutionary approach to a high-speed DRAM

128m simm 72 pin

Contextual Info: UG232E32R4HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

edo dram 50ns 72-pin simm

Contextual Info: UG216E32R4HSG T Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: UG216E32R4HST-6EK Data sheets can be downloaded at www.unigen.com 64M Bytes 16M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Convertor based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

64mb edo dram simm

Abstract: K4E160411C
Contextual Info: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C

321006EQS1G03TF

Abstract: SO-DIMM 100-pin DS842 8 pin
Contextual Info: 1M x 32 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 321006EQS1G03TF 100 Pin 1Mx32 EDO DIMM Unbuffered, 1k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61