ECCOSORB Search Results

Contextual Info: ECCOSORB QR-13AF Lossy, Flexible, Fire Retardant, Foam Microwave Absorber Material Characteristics • • • • • ECCOSORB® QR-13AF foam is an environmentally friendly material free of antimony and chlorinated polymers High loss, flexible, non-magnetic,

ECCOSORB

Contextual Info: ECCOSORB MCS Thin, Flexible, Broadband Absorbers Material Characteristics • • • • • Instructions for Use Thin, flexible, high-loss, magnetically loaded, electrically non-conductive silicone rubber sheet Frequency range from 800 MHz to 18 GHz Impervious to moisture and can be subjected to

Contextual Info: ECCOSORB FGM Thin, Flexible, Impervious, Broadband Absorbers Material Characteristics • • • • • • • Thin, flexible, broadband, magnetically loaded, silicone absorber sheets Flame resistant and impervious to moisture Does not support fungal growth per MIL-STD-810E

Eccosorb HR 30

Contextual Info: ECCOSORB BSR High-Loss, Ultra-Thin, Elastomeric Microwave Absorber Material Characteristics • • • • • Thin, flexible, high-loss, electrically non-conductive silicone rubber sheet Available in two types, ECCOSORB® BSR-1 and ECCOSORB® BSR-2 Frequency range from 6 GHz to mm wave

Contextual Info: ECCOSORB CRS High-Loss, Two-Part Castable RTV Silicone Absorber Material Characteristics Instructions for Use • • Part A is supplied as a high viscosity paste. In all cases a small amount of Part B is added. See table below • To insure void-free castings, the entrapped air should

Contextual Info: ECCOSORB GDS High-Loss Silicone Rubber Sheet Material Characteristics • • • • • • Thin, flexible, electrically non-conductive silicone rubber sheet Frequency range from 6 - 35 GHz Does not support fungal growth per MIL-STD-810E Impervious to moisture and can be subjected to

MF-190

Contextual Info: ECCOSORB MF Lossy, Magnetically Loaded, Machinable Stock Material Characteristics Related E&C Products • • • • • • Rigid magnetically loaded epoxide stock For increased temperature handling to 260 °C, refer to the electrically equivalent ECCOSORB® MF500F

Contextual Info: ECCOSORB LS Lossy, Flexible, Foam Microwave Absorber Material Characteristics • • • • • • • ECCOSORB® LS is the most widely known, used, and recommended urethane foam sheet product. High loss, low density, and very flexible ECCOSORB® LS obtains it’s microwave properties via a

eccosorb AN-75

Contextual Info: ECCOSORB AN Flexible Foam Sheet Broadband Microwave Absorbers Material Characteristics • • • • • • Availability Lightweight, flexible, broadband, open-cell, polyurethane foam absorber Carbon loaded, laminated polyurethane sheets Frequency range from 600 MHz -40 GHz

Eccosorb

Contextual Info: ECCOSORB HR Lightweight Flat-Sheet Broadband Microwave Absorbers Material Characteristics • • • • • • Lightweight, flexible, flat-sheet broadband absorber Reticulated open-cell polyurethane foam sheet with a controlled conductivity gradient carbon loading system

g30n60

Contextual Info: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at

G30N60

Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Contextual Info: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

G40N60

Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

p12n60c3

Abstract: 4040 FAIRCHILD P12N60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 RHRP1560 S12N60C3 TA49123
Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

1n120cn

Abstract: GEM X 365 1N120C TB334 HGTD1N120CNS HGTD1N120CNS9A HGTP1N120CN TA49317
Contextual Info: HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

FGB40N6S2

Abstract: 40N6S2 FGH40N6S2 FGH50N6S2D FGP40N6S2 T125 TA49438
Contextual Info: FGH40N6S2, FGP40N6S2, FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2, and FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with

18n120bnd

Abstract: HGTG18N120BND 12V 200A Relay LD26 TA49304
Contextual Info: HGTG18N120BND Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

g7n60b3d

Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

G20N120CN

Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120
Contextual Info: HGTG20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

G3N60C3

Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance

zener 7.5 spice model

Abstract: HGT1S5N120BNS HGTP5N120BN LD26 RHRD6120 TA49308 TB334 IC-2521 5n120bn
Contextual Info: HGTP5N120BN, HGT1S5N120BNS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

TRANZORB

Abstract: HGTD8P50G1 HGTD8P50G1S
Contextual Info: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a