TA49057 Search Results

g7n60b3d

Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

RHRD660

Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Contextual Info: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

rhr660

Abstract: TA49057 RHRD660 RHRD660S RHRD660S9A UJ45
Contextual Info: RHRD660, RHRD660S in t e r r ii m i J a n u a ry . Data Sheet File Num ber 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride

rhr660

Contextual Info: I-LA JR F R IS s EM, c o N0 u c T 0R RHRD640, RHRD650, RHRD660, RHRD640S RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . <30ns • Operating Temperature. +175°C • Reverse Voltage Up To.

Contextual Info: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

g7n60

Abstract: G7N60B3
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

RHRP640CC

Abstract: RHRP650CC RHRP660CC TB334
Contextual Info: RHRP640CC, RHRP650CC, RHRP660CC January 2002 6A, 400V - 600V Hyperfast Dual Diodes Features RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns . They have half the recovery time of ultrafast diodes and are

g7n60b3d

Abstract: G7N60B3 G7N60 igbt g7n60b3d N 407 Diode
Contextual Info: HARRIS HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS

G7N60

Abstract: G7N60C3D zener diode gem HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

8508 zener

Abstract: g7N60C3D g7n60c HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D TA49121
Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS TM Data Sheet November 2000 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

g7n60b3d

Abstract: igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 IN8001
Contextual Info: in t e HGTP7N60B3D, HGT1S7N60B3DS r r ii J a n u a ry . m D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

G7N60

Abstract: G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

rhr660

Abstract: RHRD660 RHRD660S RHRD660S9A RHR66
Contextual Info: RHRD660, RHRD660S Data Sheet Title HR 60, HRD 0S bt A, 0V pert odes January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride

g7N60C3D

Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and

G7N60B3D

Abstract: G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 TA49190
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

rhr660

Abstract: RHRD660 RHRD660S RHRD660S9A
Contextual Info: RHRD660, RHRD660S Data Sheet January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride

igbt 600V

Abstract: g7n60c TA49121 G7N60C3D 50QL HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D LD26
Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS interrii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP7N60C3D and H G T1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

G7N60C3D

Abstract: G7N60C3 G7N60 DIODE 809 marking HGTP7N60C3D RHRD660 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A TA49121
Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and

7N60C3

Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
Contextual Info: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C

G7N60C3D

Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
Contextual Info: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability

Contextual Info: RHRP640CC, RHRP650CC, RHRP660CC S E M I C O N D U C T O R 6A, 400V - 600V Hyperfast Dual Diodes January 1998 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns .

Contextual Info: HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 25°C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining

Contextual Info: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS H A F R R IS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features • . • • • • JEDEC TO-220AB 14A, 600V at TC = +25°C 600V Switching SOA Capability

g7N60C3D

Abstract: G7N60 G7N60C3 TA49115 TA49121 G7N60c hyperfast diode reference guide HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A
Contextual Info: HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and