HGT1S3N60C3DS9A Search Results

G3N60C3

Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

g3n60c3d

Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability

3N60C3D

Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
Contextual Info: HARRIS HGTP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C

G3N60C3D

Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

g3n60c3d

Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49055 G3N60C3
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

G3N60C3D

Abstract: G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability

g3n60c3d

Abstract: HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability