TA49113 Search Results

Contextual Info: PCG3N60C3W PRELIMINARY 6A, 600V, UFS Series N-Channel IGBTs December 1997 Features Symbol C • 6A, 600V at TC = 25oC • 600V Switching SOA Capability G Formerly developmental type TA49113. E Electrical Specifications TC = 25oC, Unless Otherwise Specified

fairchild Igbts

Abstract: PCG3N60C3W
Contextual Info: PCG3N60C3W PRELIMINARY 6A, 600V, UFS Series N-Channel IGBTs January 2002 Features Symbol C • 6A, 600V at TC = 25oC • 600V Switching SOA Capability G Formerly developmental type TA49113. E Electrical Specifications TC = 25oC, Unless Otherwise Specified

G3N60C3

Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

HGTD3N60C3S9A

Abstract: HGTD3N60C3 HGTD3N60C3S LD26 RHRD460
Contextual Info: HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at TC = 25oC The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

G3N60C

Abstract: C110 HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 TB334
Contextual Info: interrii HGTD3N60C3S, HGTP3N60C3 J a n u a ry . m Data Sheet 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

g3n60c3d

Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability

G3N60C

Abstract: ns802 HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 LD26 RHRD460 TB334 N-Channel IGBT
Contextual Info: HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

EM- 546 motor

Abstract: G3N60C
Contextual Info: HGTD3N60C3, HGTD3N60C3S HARRIS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at Tc = 25°C The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of

3N60C3D

Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
Contextual Info: HARRIS HGTP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C

hg 3a 1004

Abstract: BT 139 F applications note
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability

g3n60c3d

Abstract: SE101-1 HGT1S3N60C3DS9A HGTP3N60C3D HGT1S3N60C3DS G3N60C3
Contextual Info: in t e HGTP3N60C3D, HGT1S3N60C3DS r r ii J a n u a ry . m Data Sheet 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and H G T1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

G3N60C3D

Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

ns802

Abstract: HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 RHRD460 TB334 transistor TO-220AB
Contextual Info: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

g3n60c3d

Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49055 G3N60C3
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

G3N60C

Abstract: HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 LD26 RHRD460 TB334 ns802
Contextual Info: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 File Number 4139.5 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

G3N60C3D

Abstract: G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability

HGTD3N60C3

Abstract: HGTD3N60C3S HGTD3N60C3S9A LD26 RHRD460 G3N60C
Contextual Info: HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT June 1996 Features • • • • • Packaging 6A, 600V at TC = +25oC 600V Switching SOA Capability Typical Fall Time - 130ns at TJ = +150oC Short Circuit Rating Low Conduction Loss

g3n60c3d

Abstract: HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A
Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability