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    T1S3N60C3DS Search Results

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    Rochester Electronics LLC HGT1S3N60C3DS

    IGBT 600V 6A TO-263AB
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    DigiKey HGT1S3N60C3DS Bulk 268
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    • 1000 $1.12
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    Harris Semiconductor HGT1S3N60C3DS

    Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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    Rochester Electronics HGT1S3N60C3DS 585 1
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    • 100 $1.08
    • 1000 $0.90
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    T1S3N60C3DS Datasheets Context Search

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    g3n60c3d

    Abstract: SE101-1 HGT1S3N60C3DS9A HGTP3N60C3D HGT1S3N60C3DS G3N60C3
    Contextual Info: in t e HGTP3N60C3D, T1S3N60C3DS r r ii J a n u a ry . m Data Sheet 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and H G T1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan     		HGTP3N60C3D, HGT1S3N60C3DS HGT1S3N60C3DS TA49113. TA49055. g3n60c3d SE101-1 HGT1S3N60C3DS9A HGTP3N60C3D G3N60C3 PDF