E023 Search Results

E0234E

Abstract: E0123N E0234E30 ELPIDA DDR User ELPIDA SDRAM User Manual
Contextual Info: User’s Manual HOW TO USE DDR SDRAM Document No. E0234E30 Ver.3.0 Date Published April 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2002 INTRODUCTION This manual is intended for users who design application systems using double data rate synchronous

E0123N

Abstract: E0234E E0234E50 LDM 171 Operation Manual ELPIDA DDR User sdr sdram DDR266 ELPIDA DDR manual E0234
Contextual Info: User’s Manual HOW TO USE DDR SDRAM Document No. E0234E50 Ver.5.0 Date Published August 2007 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2002-2007 INTRODUCTION This manual is intended for users who design application systems using double data rate synchronous

Contextual Info: 7 8 5 6 1 2 3 4 VICOR CONFIDENTIAL REV. THIS DOCUMENT AND THE DATA DISCLOSED HEREIN OR HEREWITH IS NOT TO BE REPRODUCED, USED OR DISCLOSED IN WHOLE OR IN PART TO ANYONE WITHOUT THE PERMISSION OF VICOR CORP. 1 2 3 4 5 F DESCRIPTION RELEASED PER E0230307 REVISED PER E080070

CM35

Contextual Info: ITD-E0233LCD GROUP D EXTERNAL DIMENSION 2 LOGIC PIN# SYM. 1 COM 2 E 3 D 4 C 5 B 6 A 7 F 8 G

E0234E

Abstract: E0123N DDR266 E0234E40 E023 ELPIDA DDR User
Contextual Info: User’s Manual HOW TO USE DDR SDRAM Document No. E0234E40 Ver.4.0 Date Published September 2005 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2002-2005 INTRODUCTION This manual is intended for users who design application systems using double data rate synchronous

Contextual Info: 7 8 5 6 1 2 3 4 VICOR CONFIDENTIAL REV. THIS DOCUMENT AND THE DATA DISCLOSED HEREIN OR HEREWITH IS NOT TO BE REPRODUCED, USED OR DISCLOSED IN WHOLE OR IN PART TO ANYONE WITHOUT THE PERMISSION OF VICOR CORP. 1 2 3 4 5 F DESCRIPTION RELEASED PER E0230307 REVISED PER E080070

Contextual Info: 7 8 5 6 1 2 3 4 VICOR CONFIDENTIAL REV. THIS DOCUMENT AND THE DATA DISCLOSED HEREIN OR HEREWITH IS NOT TO BE REPRODUCED, USED OR DISCLOSED IN WHOLE OR IN PART TO ANYONE WITHOUT THE PERMISSION OF VICOR CORP. 1 2 3 4 5 F DESCRIPTION RELEASED PER E0230307 REVISED PER E080070

Contextual Info: VICOR CONFIDE NTIAL REV. THIS DOCUMENT AND THE DATA DISCLOSED HEREIN OR HEREWITH IS NOT TO BE REPRODUCED, USED. OR DISCLOSED IN WHOLE OR IN PART TO ANYONE WITHOUT PERMISSION OF VICOR CORP. DATE APPROVED 01 RLSED PER E990276 DESCRIPTION AK 6 /2 8 /9 9 RCM 2

1723218

Abstract: MK3DSMH
Contextual Info: Extract from the online catalog MK3DSMH 3/ 3-5,08 Order No.: 1723218 The illustration shows a combination as a 15-position version PC terminal block, Nominal current: 22 A, Nom. voltage: 400 V,

m077

Contextual Info: R1514x Series AEC-Q100 Grade2 Certified 150 mA Voltage Regulator Wide Input Voltage Range for Automotive Applications NO. EC-152-140220 OUTLINE The R1514x is a CMOS-based positive voltage regulator (VR) IC featuring 150 mA output current. It is specifically designed for automotive applications. The R1514xxxxB has features of high input voltage and

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104AB 128M words x 4 bits EDD5108AB (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR

Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR SDRAM DIMM EBD11UD8ABFA 128M words x 64 bits, 2 Banks Description Features The EBD11UD8ABFA is 128M words × 64 bits, 2 banks Double Data Rate (DDR) SDRAM unbuffered module, mounted 16 pieces of 512M bits DDR SDRAM

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727XFA 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727 XFA is 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: CXG1134EN High Power SPDT Switch with Logic Control For the availability of this product, please contact the sales office. Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be

Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR SDRAM DIMM EBD21RD4ABNA 256M words x 72 bits, 2 Ranks Description Features The EBD21RD4ABNA is a 256M words × 72 bits, 2 ranks Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of DDR SDRAM sealed in TCP

Contextual Info: CXD3423GA Timing Generator and Signal Processor for Frame Readout CCD Image Sensor For the availability of this product, please contact the sales office. Description The CXD3423GA is a timing generator and CCD signal processor IC for the ICX284, ICX432/434

DDR3 layout

Abstract: E0437E E0234E DDR3 timing diagram E0123N Elpida DDR3 users manual DDR3 DRAM layout ELPIDA DDR3 ELPIDA DDR manual DDR3 impedance
Contextual Info: USER'S MANUAL New Features of DDR3 SDRAM Document No. E1503E10 Ver.1.0 Date Published March 2009 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 User's Manual E1503E10 (Ver.1.0) 2 Descriptions in this document are provided only for illustrative purpose in semiconductor product operation and application

Future Technology cross reference

Abstract: DDR266A DDR266B EDD5108ABTA
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR SDRAM DIMM EBD11UD8ABFA 128M words x 64 bits, 2 Banks Description Features The EBD11UD8ABFA is 128M words × 64 bits, 2 banks Double Data Rate (DDR) SDRAM unbuffered module, mounted 16 pieces of 512M bits DDR SDRAM

EDD5104ABTA

Abstract: EDD5104ABTA-6B EDD5104ABTA-7A EDD5104ABTA-7B EDD5108ABTA
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR SDRAM EDD5104ABTA 128M words x 4 bits EDD5108ABTA (64M words × 8 bits) Description Pin Configurations The EDD5104AB is a 512M bits Double Data Rate (DDR) SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDD5108AB is a 512M bits DDR

Contextual Info: SOLID TANTALUM CHIP CAPACITORS Solid Tantalum Surface Mount T510 SERIES—High Capacitance-Low ESR FEATURES • • • • • Ultra Low ESR < 30 mΩ New E/7260 Case with ESR < 18 mΩ Up to 5 Amps ripple current RoHS Compliant & Leadfree Termination see

Contextual Info: SOLID TANTALUM CHIP CAPACITORS Solid Tantalum Surface Mount T510 SERIES—High Capacitance-Low ESR FEATURES • • • • • Ultra Low ESR < 30 mΩ New E/7260 Case with ESR < 18 mΩ Up to 5 Amps ripple current RoHS Compliant & Leadfree Termination see

Contextual Info: SOLID TANTALUM CHIP CAPACITORS T510 SERIES—High Capacitance-Low ESR FEATURES • • • • • Ultra Low ESR < 30 mΩ New E/7260 Case with ESR < 18 mΩ Up to 5 Amps ripple current RoHS Compliant & Leadfree Termination see www. kemet.com for lead transitions

Contextual Info: Low ESR MnO2 Tantalum & Aluminum Surface Mount Capacitors T510 Multiple Anode Low ESR MnO2 Series Overview The low ESR, surge-robust T510 Series is designed for demanding applications that require high surge current and high ripple current capability. This series builds upon the proven

T2014

Abstract: EIA-624
Contextual Info: Low ESR MnO2 Tantalum Surface Mount Capacitors T510 Multiple Anode Low ESR MnO2 Series Overview The low ESR, surge-robust T510 Series is designed for demanding applications that require high surge current and high ripple current capability. This series builds upon the proven