DV 311 Search Results

99218

Abstract: POM7-256C Fluke 54200 HLE-115
Contextual Info: JULY 14, 1999 TEST REPORT #99218 QUALIFICATION TESTING HLE-115-Ol-L-DV TSM-115-04-L-DV SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. L REVISION LEVEL DATE DESCRIPTION REVISION NO. - r INITIAL ISSUE

IRFP4568

Abstract: IRFP4768 D2PAK TO247 7pin package IRFB4110 IRFP4668 IRFP4568PBF IRFS3006-7PPBF IRF1324 d2pak-7
Contextual Info: BENCHMARK MOSFETS THE POWER MANAGEMENT LEADER MOSFETs for Industrial Applications Features and Benefits: • Low on resistance per silicon area • Optimized for both fast switching and low gate charge • Excellent gate, avalanche and dynamic dv/dt ruggedness

IRFP140

Abstract: DI 944
Contextual Info: PD-9.442C International S Rectifier IRFP140 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

HP70311A

Abstract: HP3610A HP54754A FOA1251B1 hp70841b FOA1252B1 G957 OC48 STM-16 TSSOP-16
Contextual Info: n io at rm fo In ce an ICs for Communications 2.5 Gbit/s, 3.3 V Transimpedance Amplifier Device Version 1.0 dv FOA1251B1, FOA1252B1 A High Gain 3.3 V Transimpedance Amplifier with Postamplifier for Tele- and Datacom Receiver Applications Advance Datasheet

diode smd marking 5j

Abstract: MARKING CODE SMD IC 12B Diode smd 5j IOR 451
Contextual Info: PD 9.1436 International IGR Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V dss =

EMC Filters

Contextual Info: EMC FILTERS Single-Phase Filters, Three-Phase Filters, Three-Phase + Neutral Line Filters, DC Filters, Screened Room Filters 3Ph+N , Output Ferrites, dV/dt Output Filters , Feedthrough Filters PREMO EMC Filters INTRODUCTION Electromagnetic Interference Most electronic equipment generates electromagnetic interference,which in some

SKHI 65

Abstract: MVA27 "SKHI 65" skhi65 connector "26 pin" din 41651 semikron SKim 304 GD semikron SKHI 64 Molex 5045-04 connector 26 pin semikron connector 26 pin
Contextual Info: SKHI 65 Absolute maximum ratings Symbol Term VS supply voltage non stabilized ViH input signal voltage high VCE collector emitter voltage (max.) rate of rise and fall of voltage dv/dt (secondary to primary side) isolation test voltage (AC, rms, 2 sec.) VisolIO

Contextual Info: PD - 9.1348A International IOR Rectifier IRL530N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on

OP103

Abstract: F7101 IRF7413
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1330A IRF7413 PRELIMINARY HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

15N60CFD

Abstract: 15N60 JESD22 SPA15N60CFD PG-TO220FP D134 transistor D94 15n60c
Contextual Info: SPA15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO220FP • Extreme dv /dt rated

SEMIKRON SKHI 65

Abstract: SKM75GB120D SKHI 65 igbt driver SKHI 23/12 igbt trigger by opto IGBT DRIVER SEMIKRON semikron SKHI 22 semikron SKHI 24 single phase ac voltage controller with igbts skhi 24 r
Contextual Info: SKHI 23/12 Absolute Maximum Ratings Ta = 25 °C, unless otherwise specified Symbol Conditions VS ViH IoutPEAK IoutAV VCE SEMIDRIVERTM dv/dt Visol IO Supply voltage primary Input signal voltage HIGH (for 15 V and 5 V input level) Output peak current Output average current

Contextual Info: PRELIMINARY International IO R Rectifier PD 9.1435 IRF7311 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching Voss = 20V

IRF7307

Abstract: MS-012AA
Contextual Info: PD - 9.1242B IRF7307 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Fifth Generation HEXFETs from International Rectifier

TRANSISTOR 15n60c3

Contextual Info: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

08n50c3

Abstract: sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3
Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

15N60C3

Abstract: 15N60 SPP15N60C3 diode 400V 4A SPA15N60C3 TRANSISTOR 15n60c3 SPI15N60C3
Contextual Info: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

07N60C3

Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

11N65C3

Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6
Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated

11N65C3

Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated

07n60c3

Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

IRL640

Abstract: IRF1010 IRL640A 91089
Contextual Info: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: International IO R Rectifier Data Sheet No. PD-6.033E IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V

Contextual Info: PD - 9.1241C International IG R Rectifier IRF7306 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynam ic dv/dt Rating • Fast Switching si o r 3D D1