DURR Search Results

nc 555

Abstract: nc555 LCHG NC27 DK855
Contextual Info: LCQD NC :555:W :55:W TIRU LCQD NC :565W :565W DC COMPONENTS CO., LTD. R RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 :5 Bfi_j_k GFBTURFS / N_l[e ][k_ `hj N[pcfmf I_[l Eckkci[lchg

he 234

Abstract: 835B
Contextual Info: LCK9B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCK9N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 935 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 675 Bfi_j_k i_[d

65-TK

Contextual Info: LCL7:B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCL7:N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 7: Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 855 Bfi_j_k i_[d

mz 73 g

Abstract: 836B mz 73 b dk qd
Contextual Info: 6O:=6< DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS 6O:=6> TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 635 Beh^i^ GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp

chn 745

Abstract: CHN 645 CHN 549
Contextual Info: LCQ RS 55: 756 TIRU LCQ RS 65 75< DC COMPONENTS CO., LTD. RFDTJGJFR SQFDJBMJSTS R TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF3QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 3 :5 mi 6555 Vifml DURRFOT 3 745 Bgj_k_l GFBTURFS 0 J^_[f `ik jkchm_^ ]ck]ncm \i[k^ 0 Snka_ io_kfi[^ k[mcha? :5 Bgj_k_l j_[e

KSD1692

Contextual Info: KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSD1692

Contextual Info: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC DURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C • HIGH PO W ER D ISSIPATION: Pc = 1.3W T A=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic

Contextual Info: 6O:=75 TIRU RFDTJGJFR SQFDJBMJSTS 6O:=77 TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 835 Beh^i^j GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp Ib`a jnbk\abf` \ZhZ[bkbkp

836B

Abstract: NZM 6 mz 73 g
Contextual Info: 6O:=6< DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS 6O:=6> TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 635 Beh^i^ GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp

2SB1105

Abstract: 2SD1605
Contextual Info: JMnic Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

2SB1106

Abstract: 2SD1606 2SB110
Contextual Info: Inchange Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications

BFr pnp transistor

Contextual Info: BFR 92P NPN Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector durrents from 0.5 mA to 20 mA
Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

EP27

Abstract: 835B
Contextual Info: 6O:=75 DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS 6O:=77 TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 835 Beh^i^j GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp

transistor 123

Abstract: cj-ca
Contextual Info: LCK65B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCK65N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 65 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 755 Bfi_j_k i_[d

2SB884

Abstract: 2SD1194
Contextual Info: SavantIC Semiconductor Product Specification 2SB884 Silicon PNP Power Transistor DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1194 APPLICATIONS ·For motor drivers,printer hammer

Contextual Info: LCI7B TIRU RFDTJGJFR SQFDJBMJSTS LCI7N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 735 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 675 Bfi_j_k i_[d LCI NFDIBOJDBM EBTB

Contextual Info: LCL7:B TIRU RFDTJGJFR SQFDJBMJSTS LCL7:N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 7: Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 855 Bfi_j_k i_[d / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^k

Contextual Info: MSD INC. ENGINEERING DATA SHEET RELAY T Y P E : F C ^ - 3 2 5 ” C V 9 [COMPUTER PART N oT7$3g3 5 2 4 ^ CUSTOM ER/SPECIFICATION: C flT flL O Ô X T 6 M REV S Ì < ^ T E ST PROCEDURE MSDP- 7 S \ T E S T REQUIREMENTS COIL dURR€MT t 3p m A 2.0 m S M A X RELEASE TIME: 5 0 m S

Contextual Info: LCK65B TIRU RFDTJGJFR SQFDJBMJSTS LCK65N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 65 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 755 Bfi_j_k i_[d LCK NFDIBOJDBM EBTB

CHN 549

Abstract: chn 745 CHN 645
Contextual Info: LCQ RS 55: 756 TIRU LCQ RS 65 75< RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF3QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 3 :5 mi 6555 Vifml DURRFOT 3 745 Bgj_k_l GFBTURFS 0 J^_[f `ik jkchm_^ ]ck]ncm \i[k^ 0 Snka_ io_kfi[^ k[mcha? :5 Bgj_k_l j_[e

Contextual Info: LCI7B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCI7N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 735 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 675 Bfi_j_k i_[d

Contextual Info: LCL65B TIRU RFDTJGJFR SQFDJBMJSTS LCL65N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 65 Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 6<5 Bfi_j_k i_[d / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^k

chn 745

Abstract: CHN 549 CHN 645 RS759 645B
Contextual Info: LCQ RS 55: 756 TIRU DC COMPONENTS CO., LTD. R RFDTJGJFR SQFDJBMJSTS LCQ 65 RS 75< TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF3QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 3 :5 mi 6555 Vifml DURRFOT 3 745 Bgj_k_l GFBTURFS 0 J^_[f `ik jkchm_^ ]ck]ncm \i[k^ 0 Snka_ io_kfi[^ k[mcha? :5 Bgj_k_l j_[e

935B

Abstract: cj-ca
Contextual Info: LCL=B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCL=N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 =35 Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 6<5 Bfi_j_k i_[d