2SB110 Search Results

2SB1100

Abstract: 2SD1591 2SB1100 npn Ic 10a npn DARLINGTON 10A
Contextual Info: Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING

2SB1101

Abstract: 2SD1601
Contextual Info: JMnic Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION

2SD1608

Abstract: 2SB1108
Contextual Info: P o w er T ra n s is to rs 2SD1608 2S D 1608 Package D im ensions Silicon NPN Triple Diffused Planar Darlington Type M edium Speed Power S w itching C om plem entary Pair w ith 2SB1108 • Features • H igh D C c u r re n t gain hFE • H igh s p e e d s w itc h in g

2SB1100

Abstract: 2sd1591 2SB1100 npn Ic 10a
Contextual Info: SavantIC Semiconductor Product Specification 2SD1591 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1100 APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications PINNING

2sd1609

Contextual Info: 2SD1609, 2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO -126 MOD 1 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage

Contextual Info: 2SB1103,2SB1104 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1603, 2SD1604 Outline T O -2 2 0 A B 2 1 1. B a s e 2. C o lle c to r F la n g e 1 . . A 3. E m itte r 2 3 4 .0 kQ 200 Q (Typ) (Typ)

Contextual Info: 2SB1101,2SB1102 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline TO -220A B 2 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 . . A 4.5 kQ 500 Q (Typ) (Typ) ^ l ' D ¿ 3 Absolute Maximum Ratings (Ta 25°C)

Contextual Info: 2SD1603,2SD1604 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1603 2SD1604 Unit Collector to base voltage

d1609

Abstract: D1610
Contextual Info: 2SD1609,2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage

Hitachi DSA002754

Contextual Info: 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to emitter voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage

2SB1108

Abstract: 2SD1608
Contextual Info: 2SD 1608 5> 2SD1608 > I J H> N PN 'J>b> Si N P N Triple Diffused Planar Darlington + * * « * * -f "j * / M e d iu m Speed P ow er Sw itching 2SB1108 1 1 > ~Z ' J* > 9 l) /C o m p le m e n ta ry P a ir w ith 2SB1108 • it • U n it *. mm 4.4m ax. 10.2m ax.

Z6 DIODE

Abstract: 2SB1103 2SB1104 2SD1603 2SD1604
Contextual Info: HITACHI 2SB1103, 2SB1104 SILICON PNP TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AM PLIFIER COMPLEMENTARY PAIR WITH 2SD1603, 2SD1604 1. Baie 2. Collector {Flange 3. Rmmer Dimensions inmm) (J E D E C T O -2 2 0 A B ) • A B S O L U T E M A X IM U M R A T IN G S (Ta=25°C)

2SB1101

Abstract: 2SB1102 Hitachi DSA00493
Contextual Info: 2SB1101, 2SB1102 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline 2SB1101, 2SB1102 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SB1101 2SB1102 Unit Collector to base voltage VCBO –60 –80 V Collector to emitter voltage

Contextual Info: HITACHI 2SB1101, 2SB1102 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY”P O W E R ^ M P U F IE R . CO M PLEM ENTARY PAIR WJTH 2 5 0 1 6 0 1 , 2 S 0 1 6 0 2 ! ttrtv 2. OHIrcîof Emitter Dotkoshhh inmm (JEDEC TO-220AB) • ABSOLUTE M AXIM UM RATINGS (T a = 2 rc >

2SB1106

Abstract: 2SD1606 2SB110
Contextual Info: Inchange Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1108

Abstract: 2SD1608
Contextual Info: Power Transistors 2SB1108 2SB1108 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2S D 1608 U nit : mm 4 4 max. ,1 0 .2 m a x. • Features 2.9max. • High DC cu rre n t gain Iife • High speed sw itching

b1104

Abstract: B1103 b-1104 Hitachi DSA002787 B1104 PNP
Contextual Info: 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage

2SB1101

Abstract: 2SB1102 2SD1601 2SD1602
Contextual Info: HITACHI 2SD1601, 2SD1602 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1101. 2SB1102 1. 0 a « 2. Collecwr Flange 3. Emiltcr (Dimensions ir>mm) (JE D E C TO-220AB) MAXIMUM C O LL E C T O R D ISSIPA T IO N CURVE A B S O L U T E M AXIM UM R A T IN G S (Ta^25°C)

2SB1109

Abstract: 2SB1110 i09 b 2SD1610
Contextual Info: HITACHI 2SB1109, 2SB1110 SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEM ENTARY PAIR WITH 2SD1609 AND 2SD1610 I! -1. lÎ | « 1. lîtiiiittr 2. C ollector 3. Dave DimCflSlWVt iit nun (JEDEC TO-126 MOD.) I AB S O LU TE M AXIM UM RATINGS (Ta=25°C)

Contextual Info: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage

b1104

Abstract: B1103 Hitachi DSA001650 b-1104 B1104 PNP
Contextual Info: 2SB1103, 2SB1104 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1603, 2SD1604 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC)

Contextual Info: 2SB1109,2SB1110 Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO -126 MOD 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB1109 2SB1110 Unit

2SB1102

Abstract: 2SD1602
Contextual Info: SavantIC Semiconductor Product Specification 2SB1102 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1602 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

Hitachi DSA00164

Abstract: 2sd1603
Contextual Info: 2SD1603, 2SD1604 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 ID 2.6 kΩ (Typ) 100 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C)