2SB1106 Search Results

2SB1106

Abstract: 2SD1606 2SB110
Contextual Info: Inchange Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications

Contextual Info: 2SB1106 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220AB 2 • ■ M[ |[ 1 2W1 1. Base 2. Collector Flange 3. Emitter |'o 3.0 kQ 180 Q (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SB1106

Abstract: 2SD1606
Contextual Info: JMnic Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

Contextual Info: 2SB1106 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220AB l ì • I 1 1. Base 2. Collector Flange 3. Emitter 2 | 'o 3.0 k£2 (Typ) 180 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings

Hitachi DSA001650

Contextual Info: 2SB1106 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 3.0 kΩ (Typ) 180 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage

2SB1106

Abstract: 2SD1606
Contextual Info: SavantIC Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SB1106

Contextual Info: HITACHI 2SB1106-S IL IC O N P N P T R IP L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R i 1, itas« 2, Collecior Flange! 3, ivmimr ^Dirtifrt^iorts in mm ( J E D E C TO -220AB) M A X IM U M C O L L E C T O R D IS S IP A T IO N CURVE

Contextual Info: 2SB1403 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter O- C M M t- ^VW 3.0 k£2 Typ 180 £2 (Typ) Ö l' 2SB1403 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ

2SB1106

Abstract: 2SB1403
Contextual Info: HITACHI 2SB1403-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute M axim um Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage V CBO -120 V Collector to emilter voltage V CEO -120 V Emitter 1o base voltage V EBO

Contextual Info: 2SB1403 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter OM M t- -wv 3.0 k£2 Typ 180 £2 (Typ) Öl- 2SB1403 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Contextual Info: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103

Hitachi DSA001650

Contextual Info: 2SB1403 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3.0 kΩ Typ 180 Ω (Typ) 3 2SB1403 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w