DS9935 Search Results

16N50P

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500

22N50P

Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
Contextual Info: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

CA16

Contextual Info: Advance Data Sheet March 2001 CA16-Type 2.5 Gbits/s Translight DWDM Transponder with 16-Channel 155 Mbits/s Multiplexer/Demultiplexer • Multiple alarms: — Loss of signal. — Loss of reference clock. — Loss of framing. — Laser degrade alarm. Applications

514256a

Abstract: MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80
Contextual Info: i O rder this docum ent by M CM 514256A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The MCM514256A is a 1,0|x CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS

Contextual Info: Preliminary Technical Information Linear Power MOSFET IXTK46N50L With Extended FBSOA IXTX46N50L VDSS ID25 N-Channel Enhancement Mode RDS on = 500 = 46 ≤ 0.16 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR

Contextual Info: VDSS ID25 IXTQ88N28T Trench Gate Power MOSFET RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V

DISPERSION COMPENSATING FIBER

Abstract: DCF fiber dcf fiber parameters AP99-020 1725-type GR-1312-CORE 1725 edfa DS99-353
Contextual Info: Preliminary Data Sheet February 2003 TriQuint Optoelectronics 1725-Type Gain Block Erbium-Doped Fiber Amplifier Features • intCTOR QICuONDU i r TSEM Characterized by extremely flat gain over a wide 1.5 µm wavelength range, the 1725-Type Gain Block EDFA features a

16n50

Abstract: 646V
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ = 200 ns RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

46N50L

Contextual Info: Power MOSFETs with Extended FBSOA IXTK 46N50L IXTX 46N50L VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXTK) VDSS TJ = 25 C to 150 C 500 V VDGR

Hytrel G

Abstract: schematic power diode laser module pump DS92-212LWP agere photodiode 263JLG DS98-339LWP
Contextual Info: Data Sheet March 2000 263-Type 0.98 µm Pump Laser with Fiber Grating Applications • Erbium-doped fiber amplifier systems: — Optical preamplifiers — In-line optical repeaters — Power-booster amplifiers Description Offering superior wavelength stability, the 263-Type Laser

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFV22N50P IXFV22N50PS IXFH22N50P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: PolarTM Power MOSFETs VDSS ID25 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV RDS(on) trr(typ) G S D (TAB) 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤

263DN-263HN

Abstract: 263DN lucent DFB laser application 263KN laser diode symbol schematic laser sensor performance LUCENT ELECTRO DEVICE LUCENT InGaAs 263EN laser detector
Contextual Info: Data Sheet March 2000 263-Type 0.98 µm Pump Laser Module Features The 263-Type Laser Modules are designed exclusively as continuous wave CW optical pump sources for 1.5 µm erbiumdoped fiber amplifier systems. • High-coupled rated output power (up to 180 mW

IXTP60N20T

Abstract: 60N20T IXTA60N20T 60n20 ixtq60n20t ixta 60N20T ixtp60n20 ixys 60n20t ixta60n2 ixta60n20
Contextual Info: IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C

Contextual Info: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFA16N50P IXFP16N50P IXFH16N50P = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions

ixtq-22n50p

Abstract: 22N50P IXTQ 22N50P PLUS220SMD 22N50 C5237 8V45
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

88N28T

Abstract: IXTQ88N28T ixtq
Contextual Info: IXTQ 88N28T Advance Technical Infomation IXTQ 88N28T Trench Gate Power MOSFET VDSS ID25 RDS on = 280 V = 88 A Ω = 42 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 280 V VDGR

22N50P

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXFH 22N50P VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25 IDM

IXTQ22N50P

Abstract: IXTH22N50P IXTV22N50P IXTV22N50PS ixtq-22n50p 22N50 PLUS220SMD IXTH 22N50P
Contextual Info: IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV VDSS ID25 RDS(on) trr(typ) G D (TAB) S 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤

60n20

Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
Contextual Info: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions

2 Wavelength Laser Diode

Abstract: 263PN 263DN 263EN 263FN 263GN 263HN 263JN 263KN 263LN
Contextual Info: Data Sheet March 2000 263-Type 0.98 µm Pump Laser Module Applications • Erbium-doped fiber amplifier systems: — Optical preamplifiers — In-line optical repeaters — Power-booster amplifiers Description The 263-Type Laser Modules are designed exclusively as

IXTK46N50L

Abstract: PLUS247 46n50
Contextual Info: Preliminary Technical Information Linear Power MOSFET IXTK46N50L With Extended FBSOA IXTX46N50L VDSS ID25 N-Channel Enhancement Mode RDS on = 500 = 46 ≤ 0.16 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR

IXTQ80N28T

Abstract: IXTQ
Contextual Info: IXTQ 80N28T Advance Technical Infomation IXTQ 80N28T Trench Gate Power MOSFET VDSS ID25 RDS on = 280 V = 80 A Ω = 49 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR

lucent 263mng

Abstract: lucent microelectronics pump laser D2500 Grating Hytrel G Lucent 1319 lucent EDFA DS92-212LWP Laser sensor module laser receiver module
Contextual Info: Data Sheet March 2000 263-Type 0.98 µm Pump Laser Module with Fiber Grating Applications • Erbium-doped fiber amplifier systems — Optical preamplifiers — In-line optical repeaters — Power-booster amplifiers Description Offering superior wavelength stability, the 263-Type Laser