DS99353B Search Results
DS99353B Datasheets Context Search
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Contextual Info: VDSS ID25 IXTQ88N28T Trench Gate Power MOSFET RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V |
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IXTQ88N28T DS99353B | |
IXTQ88N28TContextual Info: Trench Gate Power MOSFET IXTQ88N28T VDSS ID25 RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V |
Original |
IXTQ88N28T DS99353B IXTQ88N28T |