IXTQ88N28T Search Results

Contextual Info: VDSS ID25 IXTQ88N28T Trench Gate Power MOSFET RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V

IXTQ88N28T

Contextual Info: Trench Gate Power MOSFET IXTQ88N28T VDSS ID25 RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim