DS9908 Search Results

OR3LP26B

Abstract: OR3T20 ORT8850 7ba2 diode pb7d
Contextual Info: Preliminary Data Sheet April 2001 PayloadPlus /APC UTOPIA Slave Bridge Introduction Features The PayloadPlus/ATM port controller APC universal test and operations PHY interface for ATM (UTOPIA) slave bridge, also known as the PayloadPlus APC wedge (PAW) or the Atlanta™ interface

IC TTL 7495 diagram and truth table

Abstract: BA 5979 S AM 5766 BA 5979 motorola s240 pin diagram of ic 7495 Xilinx counter transistor on 4409 PR25D inverter design using plc
Contextual Info: Data Sheet June 1999 ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.35 µm OR3C and 0.3 µm (OR3T) 4-level metal technology, (4- or 5-input look-up table delay of 1.1 ns with -7 speed grade in

23N60

Contextual Info: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

PT35c transistor

Abstract: pt35c transistor pt36c me 4946 PBGA PR25D transistor on 4409 307-45 4946 ah lm 458 ic
Contextual Info: Data Addendum March 2002 ORCA OR3LxxxB Series Field-Programmable Gate Arrays Introduction This data addendum refers to the information found in the ORCA® Series 3C and 3T Field-Programmable Gate Arrays Data Sheet. • ■ Features ■ ■ ■ ■ ■ ■

44N80

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

QHW050D1

Abstract: QHW075D1 QHW100D1
Contextual Info: Advance Data Sheet February 2000 QHW050D1, QHW075D1, and QHW100D1 Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 2 Vdc Output; 20 W to 40 W Features The QHW Series Power Modules use advanced, surfacemount technology and deliver high-quality, efficient, and

Contextual Info: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz VCES IC25 VCE sat = 600 V = 200 A = 1.35 V Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20

circuit diagram of MOD 100 counter using ic 7490

Abstract: RSC14 plcf circuit diagram of MOD 8 counter using ic 7490 R14C11
Contextual Info: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

transistor pt36c

Abstract: pt36c PT35c transistor INTEL Core i5 760 PB7D pt35c k72 w5 OR3L165B8BM680-DB PB27A AL962
Contextual Info: Data Addendum March 2002 ORCA OR3LxxxB Series Field-Programmable Gate Arrays Introduction • ■ Features ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.25 µm 5-level metal technology. 2.5 V internal supply voltage and 3.3 V I/O supply

80N40

Abstract: 80N4 80N40B2
Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 80N40B2 Optimized for 10-30 KHz hard switching and up to 300 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

20N120BD1

Abstract: ixys dsep 8-12a
Contextual Info: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

QHW100G1

Abstract: FLTR100V10 QHW050G1 QHW075G1 FDS010 FLTR100V
Contextual Info: Data Sheet July 2001 QHW050G1, QHW075G1, and QHW100G1 Power Modules; dc-dc Converters: 36 to 75 Vdc Input, 2.5 Vdc Output; 25 W to 50 W Features The QHW Series Power Modules use advanced, surfacemount technology and deliver high-quality, efficient, and compact dc-dc conversion.

QHW100G

Abstract: QHW100
Contextual Info: Advance Data Sheet Dec 22, 1999 QHW050G, QHW075G, and QHW100G Power Modules: dc-dc Converters; 36 to 75 Vdc Input, 2.5 Vdc Output; 25 W to 50 W Features The QHW Series Power Modules use advanced, surfacemount technology and deliver high-quality, efficient, and

PL23B

Abstract: CORE F5A pt35c 104 00 54407 1 PR25D
Contextual Info: ORCA OR3LxxxB Series Device Datasheet June 2010 All Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.

L7583

Abstract: L7583B L8567 T7507
Contextual Info: Data Sheet August 1999 T7507 Quad PCM Codec with Filters, Termination Impedance, and Hybrid Balance Features • 5 V only ■ Low-power, latch-up-free CMOS technology: — 37 mW/channel typical operating power dissipation — 1 mW/channel typical powerdown dissipation

23N60

Abstract: G 23N60 SiS 961 IXTQ23N60Q 123b1
Contextual Info: IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS on 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFH 26N49Q VDSS ID25 RDS on ≤ 250 ms trr Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 490 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 490

LUCENT DSP1610

Abstract: an 7591 ci an 7591 an 7591 integrated audio amplifier circuits electret condenser microphone preamplifier DSP16A electret condenser microphone element cps1027 lucent CSP1027 44-PIN
Contextual Info: Data Sheet December 1999 CSP1027 Voice Band Codec for Cellular Handset and Modem Applications 1 Features • ■ ∆-Σ delta-sigma A/D and D/A converters with standard 16-bit serial I/O interface. On-chip filters meet ITU-T G.712 voice band frequency response and signal to distortion plus noise

200n60

Abstract: UPS SIEMENS 200N60A2 123B16
Contextual Info: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz Preliminary Data Sheet Symbol = 600 V = 200 A = 1.35 V E Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30

60N40

Abstract: V2043 60n4
Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 60N40B2 Optimized for 10-30 KHz hard switching and up to 300 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Ultrafast MOSFET Driver

Abstract: 408CI
Contextual Info: IXDD408PI / 408SI / 408YI / 408CI 8 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V

transistor pt36c

Abstract: pt35c PT35c transistor k72 v1 CHIP T 409 ES OR3L165B7BA352-DB or3l165b7bc432i-db GSrm PB27A OR3L165B8BM680-DB
Contextual Info: ORCA OR3LxxxB Series Device Datasheet June 2010 All Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.

L7583

Abstract: L7583B L8567 T7507 pub 43801
Contextual Info: Data Sheet August 1999 T7507 Quad PCM Codec with Filters, Termination Impedance, and Hybrid Balance Features • 5 V only ■ Low-power, latch-up-free CMOS technology: — 37 mW/channel typical operating power dissipation — 1 mW/channel typical powerdown dissipation

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings