DS6003 Search Results

DRD4460V22

Contextual Info: DRD4460V22 Rectifier Diode DS6003 – 1 March 2011 LN28190 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 4460A 56400A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD4460V22 DRD4460V20

Contextual Info: DRD4460V22 Rectifier Diode DS6003 – 1 March 2011 LN28190 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 4460A 56400A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD4460V22 DRD4460V20

Contextual Info: P/N: T-11-1250-X3-XXX-X-XX PIN-TIA Receiver Modules-Receptacle & Pigtailed 3.3V Features z z z z z InGaAs/InP PIN Photodiode with trans-impedance amplifier High Sensitivity with AGC* Differential ended output Single +3.3V operation -40~85°C operating temperature

DS60037

Abstract: 28C64B-25 28C64B M/28C64B
Contextual Info: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation

F91300 MASSY

Contextual Info: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100nA Standby • Fast Byte Write Time— 200|is or 1ms • Data Retention >10 years

FAN5250

Abstract: Mobile Duron PackagePin FAN4855 FAN5037 FAN5038 FAN5059 FAN5660 FAN6555 ILC6363
Contextual Info: Analog and Mixed Signal Output Current A (Min) (V) (Max) (V) Application Type Modulation Light Load PFM Mode PWM Outputs (V) (Min) (V) (Max) (V) HS-Output RDS (VON) (mOhm) LS-Output RDS (VON) (mOhm) Frequency Range (KHz) Output Accuracy ±% Vout Package

Contextual Info: 28C16A & M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100nA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

28C256B

Abstract: EEPROM 28C256 28C256 microchip
Contextual Info: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times

Contextual Info: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years

Contextual Info: & M ic ro c h ip 2 7 H C 1 6 1 6 256K 16K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • 16 bit configuration The Microchip Technology Inc. 27HC1616 is a CMOS 16K x 16 (256K) Programmable Read Only Memory. • High speed performance — 45ns Maximum access time

27HC416

Contextual Info: & 27HC416 M icrochip 64K 4K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance — 45ns Maximum access time • CMOS Technology for low power consumption — 90mA Active current — 100(iA Standby current (low power option)

26c64

Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Contextual Info: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times

Contextual Info: H1H T tU MIC ROCHIP TECHNOLOGY INC S2E D • blD32Dl QOQHflBL 1 ■ T -^ k -a -z 1» 27HC416 64K 4K x 16 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance — 45ns Maximum access time

Contextual Info: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation

Contextual Info: & 28C17A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C17A is a CMOS 16K non-volatile electrically Erasable and Programm able Read Only Memory. The 28C17A is accessed like a