28C16A Search Results

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19

Contextual Info: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte

F91300 MASSY

Contextual Info: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100nA Standby • Fast Byte Write Time— 200|is or 1ms • Data Retention >10 years

tce 1994

Abstract: L0523 28C16A
Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • High Endurance-Minimum 104 Erase/Write Cycles

Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 ]xs or 1 ms • Data Retention >200 years

Contextual Info: 28C16A & M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100nA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES PACKAGETYPES h. o o => 8 |!±j o • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years

200B

Abstract: 28C16A DK-2750 RG41
Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

Contextual Info: $ M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES 24 D V ce A5C 3 M C 4 22 H A 9 A3C S 20 23 D A B 21 D W E A2C 6 o 18 3 A 1 0 A1C 7 AO C 8 5 16 : c e 17 D l/0 7 vooC 9 v o i z 10 16 3 1 /0 6 15 D i/ o s I/0 2 C 11 14 H U 0 4 VssC 12 13 ] 1/03 A6

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 1OOjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: blD32Gl DGD7S2b DQñ « M C H R ti3 E D MICROCHIP TECHNOLOGY INC 28C16A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • C M OS Technology for Low Power Dissipation - 30 m A Active - 100 |iA Standby • Fast Byte W rite Time— 200 [is or 1 ms • D ata R etention >200 years • High E ndurance-M inim um 104 Erase/Write Cycles

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 |xs or 1 ms • Data Retention >10 years

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles

28C16A DATASHEET

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched

Contextual Info: $ 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 jiA Standby • Fast Byte Write Time— 200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: Obsolete Device 28C16A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2

L0615

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast R ead Access Tim e— 1 50 ns • C M O S Technology for Low Pow er Dissipation - 3 0 m A Active - 100 ^ A Standby A7 C• 1 23 H a s A s ti 3 22 3 A 9 A4C 4 21 3 W É A3 C 5

CAT28C16A

Contextual Info: 28C16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: ■ Hardware Write Protection –Active: 25 mA Max. –Standby: 100 µA Max. ■ CMOS and TTL Compatible I/O

palce16v8 programming algorithm

Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
Contextual Info: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.

CAT28C16A

Abstract: 1N914 28C16A
Contextual Info: 28C16A 28C16A 16K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: ■ Hardware Write Protection –Active: 25 mA Max. –Standby: 100 µA Max. ■ CMOS and TTL Compatible I/O

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which