28C64 Search Results

Contextual Info: GENERAL INSTRUMENT PREUOMilDNIÂIRlY D 1 N IF O M Â T D O IM 28C64A 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • High Performance CMOS Technology for Low Power Dissipation — 100 /uA Standby — 30 mA Active ■ Fast 1-ms Byte Write Time

28C64 EEPROM

Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
Contextual Info: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable

Contextual Info: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically

DS60037

Abstract: 28C64B-25 28C64B M/28C64B
Contextual Info: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation

2BC64

Contextual Info: 28C64A & DICE FORM M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM D IE C O N F IG U R A TIO N FEATURES Die Size: 134 x 206 sq. mils n (O w Tf n Q § Q O 9 | • 250ns Access Time • CMOS Technology for Low Power Dissipation cm T- o — 30m A Active

Contextual Info: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms

26c64

Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
Contextual Info: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low

Contextual Info: 28C64A M icro ch ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100|iA Standby • Fast Byte Write Time— 200|js or 1ms • Data Retention >10 years

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for 28C64 - 2.7V to 3.6V for 28C64-xxW ■ LOW POWER CONSUMPTION

200B

Abstract: 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25
Contextual Info: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13

Contextual Info: 28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal

Contextual Info: Military 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns Maximum • C M O S Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms

28c64b

Abstract: 28HC64b 5a9520 6D1565 7A3015-1 MIL-M-38535 6C9646 6D9702
Contextual Info: PAGE 1 OF 8 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64B PEROM RELIABILITY DATA -150°C OPERATING LIFE TEST -200°C RETENTION BAKE -CYCLE TEST -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY OPERATING LIFE TEST

Contextual Info: 28C64A PR O D UC T PREVIEW 64 High Speed CMOS K Electrically Erasable PROM October 1989 Block Diagram Features • ■ ■ ■ High Speed: 90, 120, 150 ns Access Times ROW ADDRESS LATCHES Commercial and Military Temperature Ranges CMOS Technology Low Power

28c64 military

Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
Contextual Info: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range

Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3

Contextual Info: 3890002 GENL mCROCHIP $ TECHNOLOGY I NS T R / INC GENERAL INSTRUMENT 83D MICROCHIP A3 D 28C64A 03412 bl03SGl 0GD341S D T-M q-i3~27 1 I P B i y H D I i M I R V O lN lF Û IR tl T D Û IN l 64K (8K x 8 CMOS ElectricaUy Erasable PROM FEATURES • High Performance CMOS Technology for Low

28C64A

Abstract: A12C HA11
Contextual Info: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

ltdf

Abstract: 28C64A 28C64A-20 28C64A-25
Contextual Info: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for 28C64 - 2.7V to 3.6V for 28C64-xxW ■ LOW POWER CONSUMPTION

26c64

Abstract: 26C64A *26C64
Contextual Info: a 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without

28C64AP

Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
Contextual Info: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times