DS50 Search Results

E78E

Contextual Info: E78E78-系列 外 观 图 外 型 尺 寸 按检 测方 式分 类 直接反射型 直流 NPN 输出 型 直流 PNP 输出 交 流 二 线 SCR 输出 继 号 电 器 触 反射板反射型 对射型 输出接线 图 常开 E78-DS50C1 E78-R4C1 E78-5C1 图1

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

8051 code assembler for data encryption standard

Abstract: t3th HM628128 8051 coding for data encryption standard DS5000 DS5001FP DS5002FP DS5002FP-12 DS5002FP-16 DS5002FPM-12
Contextual Info: DS5002FP ti4 E D 2hmi3D DALLAS □D D7 S1 S SEMICONDUCTOR DALLAS SEMICONDUCTOR PIN ASSIGNMENT • 8051 compatible uC for secure/sensitive applications 8 8 B ^ Ù5.,_ S ° Access 32, 64, or 128K bytes of nonvolatile SRAM for program and/or data storage - In-system programming via on-chip serial port

ba1s

Abstract: QS500 BD7 274 FP 801 CRC-16 DS5001FP DS5002FP dallas nvram cmos
Contextual Info: Bi b4E » DALLAS 2bl4130 0 0 0 7 ^ 2 SEMI CONDUCT OR S3b « D A L DS5001FP CORP DALLAS SEMICONDUCTOR DS5001FP 128K Soft Micro Chip FEATURES PIN ASSIGNM ENT • 8051 compatible uC adapts to its task - Accesses up to 128K bytes of nonvolatile S RAM In-system programming via on-chip serial port

Venice 6.2 internet radio module

Contextual Info: WiFly Command Reference, Advanced Features and Applications User’s Guide  2014 Microchip Technology Inc. DS50002230A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

MP03HBT175-16

Abstract: MP03XXX175
Contextual Info: MP03XXX175 Series MP03XXX175 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2000 version, DS5098-4.0 DS5098-5.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VDRM 1600V ■ Electrically Isolated Package ITSM 6800A ■ Pressure Contact Construction

Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: June 21, 1996 Subject: PRODUCT CHANGE NOTICE – G61401 Description: DS5002M Burn–in Reduction Description of Change: This memo is to notify you of a change in the burn–in duration for the DS5002M Secure Micro. The

100base

Abstract: NWK933 Mitel Semiconductor process flow
Contextual Info: NWK933 NWK933 3.3V 10/100 Fast Ethernet Transceiver to MII DS5029 Issue no 2.1 May 1999 Features Odering Information ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● Integrated 10/100 Mbps Ethernet in a Single Chip Solution Single 3.3V Power Supply

P2353AA

Abstract: 2N2222 transistor to drive a relay TISP2290 q2 tip 120 dpdt mechanical relays 3v BAS16 BAV99 MT91600 MPSA92 replaced
Contextual Info: MT91600 Programmable SLIC Preliminary Information Features • • • • • • • • • DS5057 MT91600 28 Pin SSOP Package -40°C to +85°C Description The Mitel MT91600 provides an interface between a switching system and a subscriber loop, mainly for

QSOP16

Contextual Info: VENUS-L CDMA/AMPS Dual Band and RF Receiver Datasheet DS5082 Features ISSUE 2.2 November 2001 Ordering Information • Selectable dual RF input ports for 900MHz AMPS and 1900MHz CDMA bands. • Power Management Control VENUSL/KG/QP1S 16 lead QSOP Package, in tubes

ITH08C06A

Abstract: ITH08C06B T0220AB T0-263
Contextual Info: ITH08C06 MITEL SEM ICON D UCTOR High Frequency Powerline N-Channel IGBT with Ultrafast Diode Supersedes O ctober 1998, version DS5044-1.2 DS5044-2.0 April 1999 The ITH08C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: DS5002FP PRO DU CT PREVIEW DS5002FP Secure Micro Chip DALLAS SEMICONDUCTOR FEATURES • Enhanced security features: - Stronger address/data encryptor - 64-bit encryption key word - Automatic true random key generation - SDI Self-Destruct Input - Top coating defeats microprobe

Contextual Info: DS5001FP DALLAS DS5001FP 128K Micro Chip s e m ic o n d u c t o r FEATURES PIN CONNECTIONS 8 • Enhanced CMOS microcontroller addresses up to 128K of NV SRAM for program/data & 8 ,«• Sfil £, w í o^ Ní ,*• £ ^ N u M < 9 U a < o U O U O J O 0aa.cLscLOZoa<fi

MH88612C

Abstract: MH88612
Contextual Info: MH88612K Subscriber Line Interface Circuit Preliminary Information DS5066 Features • • • • • • • • • • Input impedance 600 Ω Transformerless 2-wire to 4-wire conversion Battery and ringing feed to line Off-hook and dial pulse detection

047-710

Abstract: diode cross reference GENERATOR SET manual cross reference multiplexer 64 XC2064 XC3090 XC4005 XC-DS-501 logic gates cross reference
Contextual Info: Xilinx CORE Generator System Compatibility Guide September 1999 R , XILINX, XACT, XC2064, XC3090, XC4005, XC-DS501, FPGA Archindry, NeoCAD, NeoCAD EPIC, NeoCAD PRISM, NeoROUTE, Plus Logic, Plustran, P+, Timing Wizard, and TRACE are registered trademarks of Xilinx, Inc.

LOGO 230 RC

Abstract: 723dc
Contextual Info: MH88617 Programmable SLIC with Ringing Amplification Advance Information Features • • • • • • • • • • • • • DS5037 Fully programmable line impedance,network balance impedance and gains Programmable loop current with long loop capability

ACR300SG33

Abstract: ACR30 ACR300 AN4839 2000V to 3000V diodes
Contextual Info: ACR300SG33 ACR300SG33 Fast Turn-on Asymmetric Thyristor Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000 APPLICATIONS • Capacitor Discharge ■ Pulse Power Applications FEATURES ■ The ACR300SG33 is a high voltage asymmetric thyristor which has exceptionally fast turn-on

866a RECTIFIER

Abstract: AN4839 DS502ST DS502ST09 DS502ST10 DS502ST11 DS502ST12 DS502ST13 DS502ST14
Contextual Info: DS502ST DS502ST Rectifier Diode Replaces January 2000 version, DS4794-3.0 DS4794-4.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1400V ■ High Surge Capability IF AV 866A IFSM APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control