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    MB85RS16 Search Results

    MB85RS16 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MB85RS16NPNF-G-JNERE1
    Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 16K SPI 20MHZ 8SOP Original PDF 1.46MB
    MB85RS16NPN-G-AMEWE1
    Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 16K SPI 20MHZ 8SON Original PDF 1.46MB
    MB85RS16PNF-G-JNERE1
    Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 16KBIT 20MHZ 8SOP Original PDF 36
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    MB85RS16 Price and Stock

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    RAMXEED MB85RS16NPN-G-AMEWE1

    F-RAM 16kbit FeRAM with SPI serial interface - SON8 T&R (up to 95C)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MB85RS16NPN-G-AMEWE1
    • 1 $1.82
    • 10 $1.69
    • 100 $1.56
    • 1000 $1.44
    • 10000 $1.39
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    RAMXEED MB85RS16NPNF-G-AMERE2

    F-RAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MB85RS16NPNF-G-AMERE2
    • 1 $1.91
    • 10 $1.79
    • 100 $1.66
    • 1000 $1.52
    • 10000 $1.47
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    RAMXEED MB85RS16NPNF-G-AME2

    F-RAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MB85RS16NPNF-G-AME2
    • 1 $1.91
    • 10 $1.79
    • 100 $1.66
    • 1000 $1.51
    • 10000 $1.50
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    FUJITSU Limited MB85RS16PNF-G-JNERE1

    FRAM, 2KX8, SERIAL, SPI, PDSO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MB85RS16PNF-G-JNERE1 36,314
    • 1 $2.25
    • 10 $2.25
    • 100 $2.25
    • 1000 $0.93
    • 10000 $0.84
    Buy Now

    FUJITSU Limited MB85RS16PNF-G-JNE1

    SPECIALTY MEMORY CIRCUIT, PDSO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MB85RS16PNF-G-JNE1 178
    • 1 $4.78
    • 10 $4.78
    • 100 $2.95
    • 1000 $2.95
    • 10000 $2.95
    Buy Now

    MB85RS16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-6v0-E MB85RS16 MB85RS16 PDF

    MB85RS16

    Abstract: 30f 124 equivalent
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-4v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-4v0-E MB85RS16 MB85RS16 30f 124 equivalent PDF

    MB85RS16PNF

    Abstract: MB85RS16
    Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-1v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original
    NP501-00015-1v0-E MB85RS16 MB85RS16 16K-bits MB85RS16PNF PDF

    MB85RS16PNF

    Abstract: MB85RS16 mb85rs
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-1v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-1v0-E MB85RS16 MB85RS16 MB85RS16PNF mb85rs PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-2v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-2v0-E MB85RS16 MB85RS16 PDF

    GT10-C30R4-8P pin configuration

    Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-3v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original
    NP501-00015-3v0-E MB85RS16 MB85RS16 16K-bits GT10-C30R4-8P pin configuration PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-5v0-E MB85RS16 MB85RS16 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-0v01-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-0v01-E MB85RS16 MB85RS16 PDF

    MB85RS16

    Abstract: 30f 124 equivalent
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-3v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-3v0-E MB85RS16 MB85RS16 30f 124 equivalent PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original
    DS501-00014-5v0-E MB85RS16 MB85RS16 PDF