MB85RS16PNF Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85RS16

Abstract: 30f 124 equivalent
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-4v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85RS16PNF

Abstract: MB85RS16
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-1v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

MB85RS16PNF

Abstract: MB85RS16 mb85rs
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-1v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-2v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

GT10-C30R4-8P pin configuration

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00015-3v0-E FRAM MB85RS16 MB85RS16 is a 16K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-0v01-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85RS16

Abstract: 30f 124 equivalent
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-3v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-5v0-E Memory FRAM 16 K 2 K  8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile