DS146 Search Results

Contextual Info: DS1485/DS1468 DALLAS SEMICONDUCTOR DS1485/DS1488 RAMified Real Time Clock 8K x 8 PIN ASSIGNMENT FEATURES • Upgraded IBM AT computer clock/calendar with 8K x 8 extended RAM • Totally nonvolatile with over 10 years of operation in the absence of power • Counts seconds, minutes, hours, day of the week,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

DS146

Abstract: Saronix xtal Oscillator
Contextual Info: SaRonix Crystal Clock Oscillator True TTL S1227 Series Technical Data Frequency Range: 0.5 MHz to 34 M H z Frequency Stability: ±25, ±30, ±32, ±50 or ±100 ppm over all conditions: calibration tolerance, operating tem perature range, input voltage range, load

DS2503

Abstract: DS12C885 DS2505 DS1225Y DS2068 DS2414 DS1868 c1 a6 B712 DS83C950
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product Rev DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm 0.6 µm A2 DS32KHZ A6 A3 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product Rev DS1722 A2 DS1775

A7W 34

Abstract: a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1722 DS1671 AC501
Contextual Info: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal 0.8 µm Rev DS80CH10 A3 A2 DS21352 A4 A5 Product Rev DS1722 A2 DS1722 A4 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS1822 B6 DS1822 B6-PA DS1847 B1 DS1848 B1 DS21352 A3 DS21352 A4 DS21354

DS1868

Abstract: DS1207 MUBW20-12 A7 DS2505 DS1640
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm A2 DS32KHZ A6 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product 0.6 µm Rev Rev DS1722 A2 DS1775 A1

DS-1100

Abstract: DS1620 C2 ds-2197 ds1216 DS13d12 DS2414 DS1868 DS2505 DS1225Y DS1640
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product Rev DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm 0.6 µm A2 Product Rev DS1722 A2 DS1775 A1 DS21352 A3 DS21352 A4 DS21354 A1 DS2148 A1 DS21552 A3 DS21554 A3 DS2196

ATC100B9R1CT500XT

Abstract: 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

H60701

Abstract: Marking f30
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 9, 1996 Subject: PRODUCT CHANGE NOTICE – H60701 Description: Shipping Packaging Change – Touch Memory Products Description of Change: The inner bag used to package Touch Memories is being changed from a pink polyethylene to a metalized

max14574

Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
Contextual Info: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

A6W 37

Abstract: A7W 14 a7w 16 a7w 37 A7W 34 A7W 29 ds1480 a4w 29 DS1868 DS1722
Contextual Info: RMP Process Samples 0.6 µm Standard Process Monitor Device s DS21Q43 A3-A Friday, December 28, 2001 Product DS2401 C2 Rev DS12885 B1 DS12885 B1-C DS12887 A2-C DS1425 F1 DS1425 F2 DS1501 A4-Y DS1501 A6-W DS1501 A6-Y DS1511 A6-W DS1511 DS1553 A6-Y A1 DS1543

dp74038

Abstract: 16550AF S6522 ns16550afn NS16450 CD 4060 internal circuit
Contextual Info: NS16550AF JOT National JlA Sem iconductor NS16550AF Universal Asynchronous Receiver/Transmitter with FIFOst General Description Features The NS16550AF is an improved version of the NS16450 Universal Asynchronous Receiver/Transmitter UART . Functionally identical to the NS16450 on powerup (CHAR­

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

DS1868

Abstract: DS2433 ds1480 DS2505 DS1640
Contextual Info: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal Product Rev DS32KHZ A6 DS80CH10 A5 Rev DS1232 C2-L DS1722 A2 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS21352 A3 DS21352 A4 DS21354 A1 DS21354 A4 DS2148 A2 DS21552 A3 DS21552 A4 DS21554

DS1235YW

Abstract: ds1480 DS1235YWl DS2228-1MG DS1242 DS2402 ds2403 DS1990A-f50 DS2228-4MG DS1833A
Contextual Info: RELIABILITY MONITOR PROCESS TECHNOLOGY SAMPLING PLAN VEHICLE TECHNOLOGY 0.8 µ Double Poly, Single Metal w/TEOS-OxyNitride Passivation DS87520 DS1302 DS1315 DS17485 DS21S07A DS2153 DS1868 DS1706 DS1800 DS1817 DS1866 DS1305 DS17285 DS1306 DS17485 DS1307 DS17885

ds1480

Abstract: DS13d12 DS13D14 DS83C950 DS-1100 DS1214 ds1272 ds1216 DS1671 DS1868
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product Rev DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm 0.6 µm A2 A6 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product Rev DS1775 A1 DS21352 A3 DS21354

DS1489J

Abstract: ds1469
Contextual Info: DS1489/DS1489A National ÆÆ Semiconductor DS1489/DS1489A Quad Line Receiver General Description Features The DS1489/DS1489A are quad line receivers designed to interface data terminal equipment with data communica­ tions equipment. They are constructed on a single monolith­

RS-232D

Contextual Info: DS1488 S3 ÆM National Semiconductor DS1488 Quad Line Driver General Description Features The DS1488 is a quad line driver which converts standard TTL input logic levels through one stage of Inversion to out­ put levels which meet EIA Standard RS-232D and CCITT

465B

Abstract: A114 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF6S19140H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Nippon capacitors

Abstract: Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Nippon capacitors

Abstract: Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Nippon capacitors

Abstract: Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data MRF6S19140H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier