FMS2020-001
Abstract: MIL-HDBK-263 GaN Bias 25 watt Rogers
Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process
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FPD1500
Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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fpd1500dfnmx75027dbm85ghz+1142dbmeb1500dfn-bafpd1500ssg 23 transistorstu 407bc 148 transistor datasheettransistor bc 135transistor bc 157fpd750sot89ingaas hemt biasingeb1500dfn-be
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EBD21500QFN-AA
Abstract: FPM2750QFN FPM2750 lg 5528 FPM21500QFN
Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process
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FPD1500DFN
Abstract: FPD750DFN FPD750SOT89
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FMS2031-001
Abstract: MIL-HDBK-263
Contextual Info: FMS2031-001 FMS2031-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process
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FPM2750QFN
Abstract: FPM2750 0603 footprint IPC 1P503 EBD15PA
Contextual Info: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process
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FMS2014-001
Abstract: FMS2014QFN
Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die
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FMS2016-005
Abstract: MIL-HDBK-263
Contextual Info: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
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1ghz bjt
Abstract: rf mems switch FMS2016 FMS2016-001 MIL-HDBK-263
Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
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RT4350
Abstract: FMS2016-005
Contextual Info: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET DE SiGe BiCMOS
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