RT4350 Search Results

FMS2020-001

Abstract: MIL-HDBK-263 GaN Bias 25 watt Rogers
Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process

Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process

rf mems switch using Power Handling

Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SP4T Switch HIGH POWER GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power

Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ Optimum Technology Matching Applied ANT „ GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS

Contextual Info: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at

tba300

Contextual Info: Preliminary Draft Data Sheet 1.1 FMS2031-001 10Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz

FMS2016-001

Abstract: FMS2016-001-TB FMS2016-001-TR FMS2016QFN MIL-HDBK-263 sp4t switch die
Contextual Info: FMS2016-001 Datasheet v2.4 High Power Reflective GaAs SP4T Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: 3x3x0.9mm Packaged pHEMT Switch High isolation: >30dB at 1.8GHz Low Insertion loss: 0.65dB at 1.8GHz Excellent low control voltage performance

CW-37

Abstract: TX2 RX2 tx2/rx2 MIL-HDBK-263 FMS2032
Contextual Info: FMS2032 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >40dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz

nitrogen coupling

Abstract: FMS2034 MIL-HDBK-263
Contextual Info: FMS2034 Preliminary Datasheet v2.1 SP7T Ultra-linear GaAs WEDGE Antenna Switch FEATURES: PRODUCT DESCRIPTION: • World-class IMD performance: -122 dBm at 2.14GHz • 2 Tx, 4 Rx ports, 1 TRx WCDMA , • Low Tx insertion loss: 0.6 dB at 900 MHz, 0.8 dB at 1.8 GHz

Filtronic

Abstract: FMS2003QFN MIL-HDBK-263
Contextual Info: FMS2003QFN Preliminary Data Sheet 2.2 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Low cost QFN 12 lead 3*3 package Excellent low control voltage performance Excellent harmonic performance under

ESD 141

Abstract: FMS2022 B1142 capacitor 100pF 0603
Contextual Info: Preliminary Data Sheet FMS2022 2.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 ¨ ¨ ¨ ¨ ¨ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical

FMS2016-005-TR

Abstract: FMS2016-005-TB compound semiconductors FMS2016-005 FMS2016QFN MIL-HDBK-263
Contextual Info: FMS2016-005 Datasheet v3.0 High Power Reflective GaAs SP4T Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications High isolation: >30dB at 1.8GHz Excellent low control voltage performance

FMS2014-001

Abstract: FMS2014-001-TB FMS2014-001-TR FMS2014QFN
Contextual Info: FMS2014-001 Data Sheet 3.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at

RT4350

Abstract: FMS2016-005 MIL-HDBK-263
Contextual Info: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power

RT4350

Abstract: FMS2017-001 FMS2017-001-EB FMS2017QFN MIL-HDBK-263 RF3310 5766 RF112
Contextual Info: FMS2017QFN Preliminary Data Sheet 2.1 2.4GHz DPDT GaAs Single-Band WLAN Switch Features: Functional Schematic V4 ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Suitable for Single-band WLAN 802.11b/g Applications ♦ Excellent low control voltage performance ♦ Very low Insertion loss typ. 0.6dB at 2.5GHz

FMS2007

Abstract: FMS2007-001 FMS2007-001-EB FMS2007QFN MIL-HDBK-263 capacitor 100pF 0603
Contextual Info: FMS2007QFN Preliminary Data Sheet 2.2 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Very High Tx-Rx isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT

FMS2020-001

Abstract: MIL-HDBK-263 35DBM
Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ GaAs HBT „ V2 V1 GaAs MESFET SiGe BiCMOS RF1 Si BiCMOS „ DE InGaP HBT RF2 SiGe HBT GaAs pHEMT

7474 truth table

Abstract: CW-37 7474 applications MIL-HDBK-263
Contextual Info: FMS2028 Datasheet v2.2 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz Excellent low control voltage performance

diode gp 421

Abstract: FMS2020 FMS2020-000-GP
Contextual Info: Preliminary Data Sheet 2.1 FMS2020 GaAs Multi-Purpose Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic ANT Available in die form Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications High isolation, 25dB typ at 2.5GHz

Contextual Info: Production 2.2 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz

Contextual Info: Preliminary Draft Data Sheet 1.1 FMS2031-001 10Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz

7474 truth table

Abstract: 65X65 MIL-HDBK-263 MICRO TX1 capacitor 1.8ghz 100pF 0402
Contextual Info: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5 m switch process from RFMD that offers leading edge performance optimized for switch applications.

FMS2031-001

Abstract: MIL-HDBK-263
Contextual Info: FMS2031-001 FMS2031-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process

FMS2014-001

Abstract: FMS2014-001-EB FMS2014QFN MIL-HDBK-263
Contextual Info: FMS2014QFN Preliminary Data Sheet 2.1 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels