65X65 Search Results

Infrared-Sensor

Abstract: infrared switch 65x6 infrared Sensor" ORTC
Contextual Info: CLASSIFICATION HUMAN BODY INFRARED INDUCTIVE SWITCH CHRACTERISTICS Made up of thermoluminescent infrared sensor which is most sensable to body radiation and low noise amplifer circuit SERIES NEMBER ORTA ORTB ORTC ORTD ORTE 114X65X70mm 65X65X90mm 75X50X65mm

4555D

Abstract: CIET RC-01 42la45
Contextual Info: - 42- t * t m 4 5 2 5 m m m 9 B •3 ftfôffiSÏ h (0. 6 5 W , x 7 M 1 5 v c 6 v> : 4 £2 m tM m m oË m m • ra m B T L * JB J# Ë •WtliSBiS. 4à (fïT M ■* &'(T»=2 5t m æ fs ië Í Í Vccsu 15 V PD * T 0p, 1.5 W -20/50 T ., -40/150 65x65x1.6 m m o y ;

Oscilloquartz

Abstract: oscilloquartz ocxo 5MHz OCXO 8653 OCXO8653 Oscilloquartz SA 3X108 6x109 8653 p ocxo 5mhz sma
Contextual Info: OCXO 8653 ultra low phase noise Oven Controlled Crystal Oscillator The 8653 OCXO model offers Ultra Low Phase Noise, excellent stability and spurious rejection in a 65x65x 65 mm package. Outline and Electrical connections. All dimensions in mm inches The 8653 OCXO standard frequencies include 5 and

33 2AT

Abstract: 2KS203 32T2 KS-1CH
Contextual Info: 专用于电力设备防凝露控温、加热、散热，选用高质量名牌的进口关键元件，品种、功能齐 全，安装方式多样化，国家重点工程配套产品，声誉卓著。 KS 系列自动加热除湿控制器 >> 产品选型

WinOncore12

Abstract: MOTOROLA INSTANT GPS DESIGN GUIDE GPS chip motorola GPS receiver module 32.768KHz TCXO, 2 PPB MG4100 motorola oncore guide SPI Block Guide RF loop antenna 13Mhz ARM microcontroller
Contextual Info: MOTOROLA INSTANT GPS DESIGN GUIDE VERSION 2.0 June 11, 2003 Motorola GPS Products http://www.motorola.com/GPS Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the

c1027 transistor

Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

C1004

Contextual Info: ISO 9001 Registered Process C1004 CMOS 1.0µm 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN

nokia 3310 lcd

Abstract: LCD nokia 3310 PIC-LCD-3310 Nokia 3310 65X65 MMA7260 mmc card with pic lcd 3310 LCD 3310 Nokia nokia lcd 3310
Contextual Info: PIC-LCD-3310 development board Users Manual Rev.A, July 2008 Copyright c 2008, OLIMEX Ltd, All rights reserved INTRODUCTION: PIC-LCD-3310 is development board with PIC18F67J50, NOKIA 3310 BW 84x48 pixels LCD, two LEDs and a joystick. The board has SD-MMC

ball bearing 5vdc Fan

Abstract: HYB65a05 SEPA 65x6 cpu fan ALG01 AWG28 Nippon keiki
Contextual Info: SEPA HYB65A05 BRUSHLESS FAN HYB65A05A HIGH RELIABILITY FAN AUTOMOTIVE FAN AIR PERFORMANCE DIAGRAMM SHAPE AND DIMENSION 12.3 65 Pa mmH2 O 20 2 32.5 30 60 90 140 29 HYB65A05 A 60 4.0 65 40 AIR FLOW 6 SEPA 60 5VDC 0.15A 8.0 HYB65A05 80 60 120 l/min 150 3x2.6

transistor c1027

Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

transistor C1215

Abstract: C1215 cmos transistor 0.35 um
Contextual Info: ISO 9001 Registered Process C1215 CMOS 1.2µm Low Threshold Devices Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

C0809

Abstract: silicon -field transistor p channel 07UM 800 volt PNP transistor
Contextual Info: ISO 9001 Registered Process C0809 CMOS 0.8µm 5 Volt Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold

cmos transistor 0.35 um

Abstract: C1201
Contextual Info: ISO 9001 Registered Process C1201 CMOS 1.2µm Digital Double-Metal Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

transistor k 2761

Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

C0810

Abstract: 0.6 um cmos process 07UM transistor P 112
Contextual Info: ISO 9001 Registered Process C0810 CMOS 0.8µm High-Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

cmos transistor 0.35 um

Abstract: transistor c1601 C1601
Contextual Info: ISO 9001 Registered Process C1601 CMOS 1.6µm Analog Mixed Mode Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

transistor k 2761

Abstract: C1230 C1206
Contextual Info: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage

C1232

Abstract: transistor C123
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold

MA47047

Abstract: 65X65 MVA attenuator MA4P150 MA4P151 MA4P152 MA4P153 MA4P154 MA4P155 MA4P156
Contextual Info: AtÜKO'1 M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass or Silicon Dioxide Passivation Hermetically Sealed CERMACHIP Design Fast Speed, Low Loss Microwave Chips Attenuator Chips Voltage Ratings to 1500 Volts

pepi va

Abstract: c1203
Contextual Info: ISO 9001 Registered Process C1203 BiCMOS 1.2µm 2.0GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold

C1004

Abstract: 07UM
Contextual Info: ISO 9001 Registered Process C1004 CMOS 1.0µm 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN

C1029

Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage

Contextual Info: 多口継手 鉛カドミウムの含有量を 削減した溶融亜鉛めっき 技術を開発 ¬ 印 管継手 ねじ接続による中小口径鋼管用の管継手で、JIS B 2301に「ねじ込み式可鍛鋳鉄製管継手」として規定 されている継手です。JIS規格外品も一部製造しております。

Contextual Info: カタログ シール剤付き（ウィズシール） （ウィズシール 管継手 WS 継手 印 シール剤付き（ウィズシール） （ウィズシール 管継手 WS 継手 印 適用管種：JIS G 3452 配管用炭素鋼鋼管 JIS G 3442 水配管用亜鉛めっき鋼管