pseudomorphic HEMT
Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Contextual Info: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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fpd7612fpd7612general25mx200m12ghz+618ghz22-a114mil-std-1686mil-hdbk-263pseudomorphic hemtalgaas resistivity
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7474 truth table
Abstract: 65X65 MIL-HDBK-263 MICRO TX1 capacitor 1.8ghz 100pF 0402
Contextual Info: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5 m switch process from RFMD that offers leading edge performance optimized for switch applications.
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fms2028fms2028-000ds090519fms2028-000sq+6fms2028-000s37474 truth table65x65mil-hdbk-263micro tx1capacitor 1.8ghz 100pf 0402
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FPD200 DIE
Contextual Info: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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fpd200fpd200generalmx20019dbm+512ghz18ghzfpd200-000ds090519fpd200 die
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FPD200
Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
Contextual Info: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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fpd200fpd200general25mx200m19dbm+712ghz18ghzfpd200-000ds090519fpd200 diemil-hdbk-263bjt 137
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