DS 35-12 E Search Results

10M45s

Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
Contextual Info: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35

STM4433

Contextual Info: S T M4433 S amHop Microelectronics C orp. MAY . 12 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).

AT1RC3

Abstract: semikron SKS B6U B6CI b6u b6ci SKS 59F B6CI 16 V12 IGBT SEMISTACK tds sensor B6CI 12 V12 5-pin hall skhi 20opa
Contextual Info: SEMISTACK - IGBT Circuit B6CI Symbol IRMS max Tamb = 35ºC 1 SEMIX Stack Three-phase inverter SKS 59F B6U+E1CIF+B6CI 35 V12 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj SEMiX 151 GD 128 Ds Tstg SKD 116/12 Tamb Visol w Cooling P 16/390F

OS-319

Abstract: DS1095
Contextual Info: Two-Way Power Divider 10-500 MHz DS-109/319 TO-8-2 • 1 ° Phase Balance Max ■ 35 dB Typical Midband Isolation ■ 1.1 Typical Midband VSW R FP-2 PIN 0.015 OIA ±0.005 0.3t ±0.13 8 PLACES 12 0.312 MIN TYP. (7.9 MIN) 3 4 i t 7» tOOSO p * t 0 *> Guaranteed Specifications*

IEC61249-2-21

Abstract: IPP26CNE8N 25CNE8N
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

IPB26CN10NG

Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

25CN10N

Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

IPP26CNE8N

Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

Z86C63

Abstract: Z86C64 Z86C96 P63-P62
Contextual Info: Z86C63/64 CPS DC-5461-02 P R E L I M I N A R Y PRELIMINARY CUSTOMER PRODUCT SPECIFICATION Z86C63/64 GENERAL DESCRIPTION The Z86C63/64 microcontroller introduces a new level of sophistication to single-chip architecture. The Z86C63/64 is a member of the Z8 single-chip microcontroller family with 32

cfy 14 siemens

Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Contextual Info: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5

c6025

Contextual Info: S T M8360A S amHop Microelectronics C orp. Oct.16,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 35V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -35V -5A R DS (ON) ( m W )

Z86C66

Contextual Info: Z86C66 CP96DZ82500 P R E L I M I N A R Y PRELIMINARYCUSTOMERPRODUCTSPECIFICATION Z86C66 CMOS Z8 16KROMMICROCONTROLLER FEATURES Part Z86C66 ROM KB 16 RAM* (Bytes) 256 Speed (MHz) 16, 20 n Vectored, Prioritized Interrupts with Programmable Polarity n Two Analog Comparators

M8360

Contextual Info: S T M8360 S amHop Microelectronics C orp. May.15,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 35V 7A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -35V -5A R DS (ON) ( m Ω )

stu309d

Abstract: stu309 s t u 309d U309D
Contextual Info: S T U309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID -30V -14A R DS (ON) ( m Ω )

Contextual Info: S T M8454 S amHop Microelectronics C orp. Aug.18,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 5.8A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -5A R DS (ON) ( m W )

TELEDYNE CRYSTALONICS

Abstract: 2N4447 2N4445 cgel CP650 2N4448 CP653 N4446 2n4446
Contextual Info: CP650 thru CP653 2N4445 thru 2N4448 TYPICAL CHARACTERISTICS GATE LEAKAGE CURRENT VS. TEMPERATURE < > o ►O < i o oc Z -20 - -2 5 +50 TEMPERATURE Ro~ INCREASES +75 too -120 (°C TEMPERATURE 0 .7 % / ° C I gss JUNCTION CAPACITANCE VS. VOLTAGE (°Q DOUBLES EACH !0 ° C

IXTP18N60PM

Contextual Info: PolarHVTM Power MOSFET IXTP18N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 9 A Ω ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

td 130 62706 f

Abstract: IXTP60N10T 60N10T IXTA60N10T IXTP60N10
Contextual Info: Preliminary Technical Information IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGSM Transient

Z86C30

Abstract: Z86C31 Z86C32 Z86C40 C16P04 GND03
Contextual Info: PRELIMINARY CUSTOMER PROCUREMENT SPECIFICATION « 2 ÍL 0 B Z86C30/C31 /C32/C40 C M O S Z8 CONSUMER Co n tro ller FEATURES Part ROM KB RAM* (Byte) Speed (MHz) 4 2 2 4 237 125 237 236 16 12 12 16 Z86C30 Z86C31 Z86C32 Z86C40 pro cesso r • Expanded Register File (ERF)

IXTP14N60PM

Contextual Info: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS

ISS82

Abstract: ESI 252 impedance meter D2240NL TO252and
Contextual Info: S T U/D2240NL S amHop Microelectronics C orp. Nov 22,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 35@ V G S = 10V

Contextual Info: IXTA 86N20T IXTP 86N20T IXTQ 86N20T Trench Gate Power MOSFET VDSS ID25 = 200 V = 86 A Ω ≤ 29 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200