DS 35-12 E Search Results

DSI35-12A

Abstract: DSI35 DSA35-12A diode T 3512 35-16A 3516A 3508a diode avalanche DSA
Contextual Info: 35 35 • X .2 Rectifier Diode Avalanche Diode ' RRM F RMS F(AV)M v RSM V(BR)m in VR R M •X. Anode ^ ^ on stud ■j" on stud V 900 1300 - 800 1200 DS 35-08A DS 35-12 A DSI35-08A DSI35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA35-12A OSA 35-16A

10M45s

Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
Contextual Info: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35

STM4433

Contextual Info: S T M4433 S amHop Microelectronics C orp. MAY . 12 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).

AT1RC3

Abstract: semikron SKS B6U B6CI b6u b6ci SKS 59F B6CI 16 V12 IGBT SEMISTACK tds sensor B6CI 12 V12 5-pin hall skhi 20opa
Contextual Info: SEMISTACK - IGBT Circuit B6CI Symbol IRMS max Tamb = 35ºC 1 SEMIX Stack Three-phase inverter SKS 59F B6U+E1CIF+B6CI 35 V12 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj SEMiX 151 GD 128 Ds Tstg SKD 116/12 Tamb Visol w Cooling P 16/390F

PTF 102015

Abstract: PCC103BCT-ND 0.1 uF 50v CAPACITOR DD 102 CAPACITOR
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 Efficiency -20 12 -35 ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

DD 102 CAPACITOR

Abstract: PA13 transistor 200 watt 28 v 0-30 mhz PCC103BCT-ND PCC103B
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

Contextual Info: 0 8 : 0 0 : 20 c a ro l.trib b le 2010/01/12 notice without to change is subject OPERATING TEMPERATURE RANGE - 35 °C TO +85 °C NOTES 1 RATING VOLTAGE 30 V AC CURRENT GENERAL EXAMINATION MARKING - 10°C TO + 60 °C BM10* (0 . 8 ) - 34 DS-0 . 4 V (*) 0 . 3A

OS-319

Abstract: DS1095
Contextual Info: Two-Way Power Divider 10-500 MHz DS-109/319 TO-8-2 • 1 ° Phase Balance Max ■ 35 dB Typical Midband Isolation ■ 1.1 Typical Midband VSW R FP-2 PIN 0.015 OIA ±0.005 0.3t ±0.13 8 PLACES 12 0.312 MIN TYP. (7.9 MIN) 3 4 i t 7» tOOSO p * t 0 *> Guaranteed Specifications*

VIC068A user guide

Abstract: VIC068A CY7C964 VIC64 VME64 vic068a Miscellaneous
Contextual Info: 2.4 VIC068A: Additional Information The following sections are related to Section 1, The VIC068A VMEbus Interface ControlĆ er. The chapter numbers are those chapters of Section 1 that require clarification or modifiĆ cation for the VIC64. All other information in Section 1 is applicable to the VIC64.

zilog Z8 MICROCOMPUTER FAMILY

Abstract: Z86C21/Z86E21/C12
Contextual Info: _ MARCOM DC296 4 DOCUMENT CONTROL, M ASTER C u s to m e r p r o c u r e m e n t s p e c if ic a t io n Z86E21 CMOS Z8 OTP M ic r o c o n t r o l l e r GENERAL DESCRIPTION The Z86E21 microcontroller (MCU) introduces the next level ot sophistication to single-chip architecture. The

tda 4020

Abstract: EN 4020 Z86C93 P12P06 DC-4020-12 Z86C91 DC4020 SCR P05
Contextual Info: Z86C93 CPS DC-4020-12 CUSTOMER PROCUREMENT SPECIFICATION Z86C93 CMOS Z8 MULT/DIV MICROCONTROLLER GENERAL DESCRIPTION The Z86C93 is a CMOS ROMless Z8 microcontroller enhanced with a hardwired 16-bit x 16-bit multiplier, 32-bit/16-bit divider, and three 16-bit counter timers see

TDA 3941

Contextual Info: MARCOM DC4062 C ustom er < £ 2 iL G DOCUMENT CONTROTr MASTER pro cu rem en t S pecificatio n E Z86E2112PSC1468 Z86E2112VSC1468 CMOS Z8 OTP M ic r o c o n t r o l l e r GENERAL DESCRIPTION The Z86E21 microcontroller (MCU) introduces the next level of sophistication to single-chip architecture. The

126N10N

Abstract: PG-TO220FP 126N1 JESD22
Contextual Info: IPA126N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.6 mΩ ID 35 A • Very low on-resistance R DS(on) • 175 °C operating temperature

IEC61249-2-21

Abstract: IPP26CNE8N 25CNE8N
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

IPB26CN10NG

Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

26CN10N

Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG IPB26CN10N IPI26CN10N IPP26CN10N PG-TO220-3
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

26CN10N

Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

25CN10N

Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

IPP26CNE8N

Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

IPP26CNE8N

Abstract: ATO-251
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

DD40

Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

26CN10N

Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 IPB26CN10N IPI26CN10N IPP26CN10N
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

25CN10N

Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)