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Infineon Technologies AG


Infineon Technologies AG IPI26CN10N-G MOSFET N-CH 100V 35A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPI26CN10N-G	Tube			500	1 - 10 - 100 - 1000 $0.87 10000 $0.87	Buy Now
Infineon Technologies AG IPB26CN10NGATMA1 MOSFET N-CH 100V 35A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB26CN10NGATMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	IPB26CN10NGATMA1			21 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	IPB26CN10NGATMA1		1,264			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP26CN10NGHKSA1 MOSFET N-CH 100V 35A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP26CN10NGHKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	IPP26CN10NGHKSA1		2,156			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPI26CN10NG Discontinued
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPI26CN10NG		1,968			1 - 10 - 100 - 1000 - 10000 -	Get Quote

26CN10N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IPB26CN10NG Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode	PDF
26CN10N Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG IPB26CN10N IPI26CN10N IPP26CN10N PG-TO220-3 Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3	PDF
26CN10N Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPP26CN10N G	PDF
25CN10N Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG	PDF
IPB26CN10NG Abstract: IPI26CN10NG IPP26CN10NG Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG	PDF
25CN10N Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G	PDF
Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max (TO252) 25 mW	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
26CN10N Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 IPB26CN10N IPI26CN10N IPP26CN10N Contextual Info: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3	PDF