DS 300 Search Results

MIL-W-85

Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
Contextual Info: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .

ds 290 14H

Abstract: ds 030
Contextual Info: FEATURES: SMD Style. APPLICATIONS: DC-DC converters, miniature power supplies and voltage multiplying circuits. ELECTRICAL CHARACTERISTICS: MODEL NO. DS P1309B-102 DS P1309B-152 DS P1309B-222 DS P1309B-332 DS P1309B-472 DS P1309B-682 DS P1309B-103 DS P1309B-153

diode avalanche DSA 2-16a

Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
Contextual Info: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E

5703

Abstract: 726 e3 TR-TSY000499 bipolar ami b3-z
Contextual Info: DS-726/T3/E3 T3 & E3 Data Transmission Modems Full Duplex DS-3 Modem T3 & E3 Data Transmission The DS-726/T3 and DS-726/E3 are full duplex transmission systems - a T3 Carrier at 44.735 Mbps and E3 Carrier at 34.368 Mbps. A pair of DS-726/ T3 modems with interconnecting optical cables provides

TDA 11115

Abstract: ALI 3105 TCM3105 "64-pin" rockwell modem rc2324 TDA 2025 IA4054 RC2424DP tda 12004 1650M
Contextual Info: RC2424DP/DS Integral Modems Rockwell RC2424DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2424DP/DS is a 2400 bps, full-duplex, OEM, data pump modem device set. The RC2424DP/DS operates over the public switched telephone network

CS5532

Abstract: CS5534 CS5516 CS5533 CS5322 cs5526 CS5376
Contextual Info: ® Crystal Data Acquisition Products Industrial Industrial Measurement Measurement 16-Bit 16-BitDS DSADC ADC 20-Bit 20-Bit DS DS ADC ADC Single Conversion Settling General General Purpose Purpose 22-Bit Single Channel 24-Bit 24-Bit DS DS ADC ADC On-Chip PGIA

Contextual Info: RC2324DP/DS Integral Modems Rockwell RC2324DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2324DP/DS is a 2400 bps, lull-duplex, OEM, data pump modem device s e t The RC2324DP/DS operates over the public switched telephone network

Cortex-A8 MIPI

Abstract: arm android set top box beagleboard ARM DS-5 eclipse Mistral
Contextual Info: Development Studio 5 DS-5 Development Tools for ARM Linux Quick Start Guide The ARM Development Studio 5 (DS-5TM) is a complete suite of professional software development tools for ARM Linux-based systems. DS-5 is available in three editions: n DS-5 Application

025n10n

Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

025N08N

Abstract: IPB025N08N3G IEC61249-2-21 IPB025N08N3 JESD22 IPB02CN08N
Contextual Info: IPB025N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 80 V • N-channel, normal level R DS on ,max 2.5 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 120 A previous engineering sample code: IPB02CN08N • Very low on-resistance R DS(on)

107n20n

Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
Contextual Info: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)

J 6920 A

Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

IEC61249-2-21

Abstract: IPP06CNE8N JESD22 PG-TO220-3
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

08CN10N

Abstract: ds 1-08 diode IEC61249-2-21 IPP08CN10N JESD22 PG-TO220-3 C95T
Contextual Info: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)

06CN10L

Abstract: JESD22 PG-TO220-3
Contextual Info: IPP06CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 6.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

114N12N

Abstract: diode D83 IPP114N12N3 G IPP114N12N3 JESD22 PG-TO220-3 dd60
Contextual Info: IPP114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on)max 11.4 mΩ ID • Very low on-resistance R DS(on) 75 A • 175 °C operating temperature

025N10N

Abstract: IPB025N10N3 IPB025N10N3 G JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

06cn10n

Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)

027N10N

Abstract: IPB027N10N3 IEC61249-2-21 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

075N15N

Abstract: 072N15N infineon 075n15n DIODE D100 to220 IPB072N15N3 G IPB072N15N3 IEC61249-2-21 PG-TO220-3 IPP075N15N3 DD-75
Contextual Info: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 7.2 mΩ ID 100 A • Very low on-resistance R DS(on)

048N12N

Abstract: 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 IPP048N12N3 G
Contextual Info: IPP048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

041N12N

Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G
Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)

IPP06CNE8N

Abstract: JESD22 PG-TO220-3
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)