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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange IPP06CN10NG 1,000
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    Infineon Technologies AG IPI06CN10NG

    Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Vyrian IPI06CN10NG 13,366
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    Infineon Technologies AG IPB06CN10NG

    Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    Vyrian IPB06CN10NG 8,541
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    Infineon Technologies AG IPP06CN10NG

    Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPP06CN10NG 7,591
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    Infineon Technologies AG IPP06CN10NGXKSA1

    MOSFET N-CH 100V 100A TO-220
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    Win Source Electronics IPP06CN10NGXKSA1 1,300
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    06CN10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb06cn10nipi06cn10nipp06cn10npg-to263-3+6pg-to262-3pg-to220-306cn10nj 6920 aj 6920jesd22 PDF

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb06cn10nipi06cn10nipp06cn10npg-to263-3+8pg-to262-3pg-to220-306cn10nj 6920 aj 6920mj 6920jesd22ipp06cn10ng PDF

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb06cn10nipi06cn10nipp06cn10npg-to263-3+706cn10npg-to262-306cn10diode d18006cnipi06cn10ngdiode d100 to220 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb06cn10nipi06cn10nipp06cn10niec61249-2-21+6pg-to263-3pg-to262-3pg-to220-306cn10njesd22ipp06cn10ng PDF

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb06cn10nipi06cn10nipp06cn10npg-to263-3+7pg-to262-3pg-to220-306cn10nj 6920 ads 1-08 diodej 6920jesd22 PDF

    J 6920

    Abstract: J 6920 A
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		ipb06cn10nipi06cn10nipp06cn10npg-to263-3+406cn10npg-to262-3j 6920j 6920 a PDF