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    06CN Search Results

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    Rochester Electronics LLC R5F36406CNFB-V2

    IC MCU 16BIT 144KB FLSH 100LFQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R5F36406CNFB-V2 Bulk 5,813 24
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    • 100 $12.70
    • 1000 $12.70
    • 10000 $12.70
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    Rochester Electronics LLC SP706CN-TR

    IC SUPERVISOR 1 CHANNEL 8SOIC
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    DigiKey SP706CN-TR Bulk 5,000 956
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    • 1000 $0.31
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    Analog Devices Inc LT1006CN8-PBF

    IC OPAMP GP 1 CIRCUIT 8DIP
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    DigiKey LT1006CN8-PBF Tube 732 1
    • 1 $5.75
    • 10 $4.40
    • 100 $3.69
    • 1000 $3.32
    • 10000 $3.23
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    XtalTQ Technology BT0503CH3I106CN25

    TCXO 5032-6PADS 25MHZ CMOS 3.3
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    DigiKey BT0503CH3I106CN25 512 1
    • 1 $7.75
    • 10 $7.75
    • 100 $5.85
    • 1000 $5.09
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    Rochester Electronics LLC IPP06CN10LG

    N-CHANNEL POWER MOSFET
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    DigiKey IPP06CN10LG Bulk 490 183
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    Find more 06CN price and stock on Findchips.com

    06CN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3 PDF

    06CNE8N

    Contextual Info: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PDF

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Contextual Info: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 PDF

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG PDF

    06CN10L

    Abstract: JESD22 PG-TO220-3
    Contextual Info: 06CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 6.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP06CN10L PG-TO220-3 06CN10L 06CN10L JESD22 PG-TO220-3 PDF

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220 PDF

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Contextual Info: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 PDF

    06CNE8N

    Contextual Info: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PDF

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3 06CNE8N
    Contextual Info: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 06CNE8N PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG PDF

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A ds 1-08 diode J 6920 06cn10n JESD22 PG-TO220-3 PDF

    J 6920

    Abstract: J 6920 A
    Contextual Info: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 J 6920 J 6920 A PDF