025N08N
Abstract: IPB025N08N3G IEC61249-2-21 IPB025N08N3 JESD22 IPB02CN08N
Contextual Info: IPB025N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 80 V • N-channel, normal level R DS on ,max 2.5 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 120 A previous engineering sample code: IPB02CN08N • Very low on-resistance R DS(on)
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ipb025n08n3ipb02cn08niec61249-2-21pg-to263-3+3025n08nipb025n08n3gjesd22
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025N08N
Abstract: IPB02CN08N IPB025N08N3 JESD22 IPB025N08N3 G IPB025N08N3G
Contextual Info: IPB025N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.5 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature
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ipb025n08n3ipb02cn08npg-to263-3025n08n+3jesd22ipb025n08n3 gipb025n08n3g
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