DQ202 Search Results

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

DC244

Contextual Info: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS

Contextual Info: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin

SILICONIX DG201

Abstract: DG202 SILICONIX DQ202 DG201A dg201abk siliconix DG201 dg202cj siliconix
Contextual Info: SILICONIX INC 03 8254735 SILICONIX » E § Û55473S 0012145 4 03E INC 3 Slllconix Slllconix Incorporated D 12145 DG201 A/202 Quad Monolithic SPST CMOS Analoa Switches T—51—11 FEATURES BENEFITS APPLICATIONS • + 15 Volt Input Range • Wide Dynamic Range

Contextual Info: TOSHIBA- H ^7240 DGíñSbl SEL • THM72V4030BTG-60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTH M 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC51V16400BST on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large

Contextual Info: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,

VDDSPD

Abstract: IC PIN CONFIGURATION OF 74 47
Contextual Info: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability

W3DG6430V-D2

Contextual Info: White Electronic Designs W3DG6430V-D2 PRELIMINARY* 256MB - 32M x 64 BUFFERED SDRAM MODULE FEATURES DESCRIPTION Burst Mode Operation The W3DG6430V is a 32M x 64 synchronous DRAM module which consists of sixteen 32Mx4 SDRAM components in TSOP II package, three very high speed

transistor marking A19

Abstract: HANBit 72-pin SIMM simm 72pin HMS2M32M16V HMS2M32Z16V 2m x 32 SRAM SIMM
Contextual Info: HANBit HMS2M32M16V/Z16V SRAM MODULE 8Mbyte 2M x 32-Bit , 3.3V 72-Pin SIMM Design Part No. HMS2M32M16V, HMS2M32Z16V GENERAL DESCRIPTION The HMS2M32M16V/Z16V is a high-speed static random access memory (SRAM) module containing 2,097,152 words organized in a x32-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4printed circuit board.

SL32

Contextual Info: SL32 S/T 4B8M2A-Axx 8M X 32 DRAM FPM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL32(S/T)4B8M2A-A60 60ns 15ns 110ns SL32(S/T)4B8M2A-A70 70ns 20ns 130ns SL32(S/T)4B8M2A-A80 80ns 20ns

SL72B4C16M4F-A60V

Abstract: Dram 168 pin EDO buffered 0212M
Contextual Info: SL72B4C16M4F-A60V 16M X 72 Bits DRAM 168-Pin DIMM with EDO, ECC , and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns The SiliconTech SL72B4C16M4F-A60V is an 16M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM).

SL64G4B4M2E-A60

Contextual Info: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech

A0-A12

Contextual Info: SL72U4C16M8F-AxxV 16M X 72 Bit 128MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 13ns 84ns 20ns SL…-A60V 60ns 15ns 104ns 25ns

SL32T4C32M4E-A60

Abstract: edo dram 72-pin simms 32Mx32 edo dram 60ns 72-pin simm
Contextual Info: SL32T4C32M4E-A60 32M X 32 Bits DRAM SIMM with EDO FEATURES • Performance range: tRC tRAC tCAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60 is a 32M x 32 bits Dynamic RAM DRAM Single In-line Memory Module (SIMM).

0244M

Abstract: SL64U4B4M2E-A60V
Contextual Info: SL64U4B4M2E-A60V 4M X 64 Bit 32MB DRAM 168-Pin Unbuffered DIMM with EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL64U4B4M2E-A60V is a 4M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This

A0-A17

Abstract: edge connector 64 pin a1657 30 pin simm memory transistor CS4 SL832256K1F-12AG 28-pin SOJ SRAM
Contextual Info: SL832256K1F-xxAG 256K X 32 Bits SRAM Memory Module 64-Pin SIMM FEATURES GENERAL DESCRIPTION • This product is a 256K x 32 bits Static RAM (SRAM) memory module. The module consists of eight 256K x 4 bits SRAM memory components in 28-pin SOJ packages mounted on a

719a

Abstract: SL32T4C32M4E-A60V
Contextual Info: SL32T4C32M4E-A60V 32M X 32 Bits DRAM SIMM with EDO 3.3V Power Supply FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60V is a 32M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).

DG201A

Contextual Info: Intera» HIgh-Rellabllity Products DG201A/DG202 High Reliability Quad Monolithic SPST CMOS Analog Switches GENERAL DESCRIPTION FEATURES The DG201A normally open and DG202 (normally closed) quad SPST analog switches are designed using In­ tersil’s new 44V CMOS process. These bidirectional

M53241

Contextual Info: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000A/AG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5404000A is a 4M bit x 40 tRAC 50ns 60ns 70ns 80ns Dynam ic RAM high density m em ory m odule The

Contextual Info: Preliminary KMM377S3320T1 SDRAM MODULE KMM377S3320T1 SDRAM DIMM Intel 1.0 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S3320T1 is a 32M bit x 72 Synchro­

KM44C4100AK

Contextual Info: |M /D M « ? ]} DRAM MODULE 32 Mega Byte KMM53361OOAKV/AKVG Fast Page Mode 8Mx33 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range1 The Samsung KMM533B100AKV is a 8M bit x 33 Dynamic RAM high density memory module The

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The

Contextual Info: O K I Semiconductor MSM51V17805A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17805A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The MSM51V17805A is