RF1K49093
Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Contextual Info: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
|
Original
|
rf1k490931e-3061e-409e-6+910e-399e-682e-347e-7an7254an9321an9322ms-012aarf1k4909396
|
PDF
|
|
Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
|
Original
|
fdb070an06a0fdp070an06a0o-220abo-263ab |
PDF
|
AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
|
Original
|
huf76113dk8an9321an9322huf76113dk8t+2ms-012aatb334
|
PDF
|
FQP45N03L
Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
|
Original
|
fqp45n03l1450pfo-220abfqp45n03 |
PDF
|
75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
|
Original
|
hufa75631p3hufa75631s3sto-220abo-263ab+375631pan9321tb334
|
PDF
|
ITF86182SK8T
Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
|
Original
|
itf86182sk8tms-012aatb370 |
PDF
|
AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Contextual Info: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
|
Original
|
rff70n06mil-s-19500150octa49007+5an7254an7260an9321an9322rfg70n06
|
PDF
|
7n10l
Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes
|
Original
|
rfd7n10lerfd7n10lesm7n10l7n10le+4an7254an7260rfd7n10lesm9atb334
|
PDF
|
76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Contextual Info: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
|
Original
|
huf76639p3huf76639s3so-220ab76639p+3huf76639s3sttb33492e2
|
PDF
|
|
Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
|
Original
|
rff60p06mil-s-19500150ocmil-std-750+2100ms500ms
|
PDF
|
RELAY 4088
Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using
|
Original
|
rfd14n06lrfd14n06lsmrfp14n06lrelay 4088+2tb334rfd14n06lsm9a
|
PDF
|
AN9321
Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Contextual Info: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3
|
Original
|
hufa76413d3hufa76413d3so-251aao-252aa+3an9321hufa76413d3sttb334
|
PDF
|
FD3055
Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
|
Original
|
rfd3055rfd3055smrfp3055ta49082+8175octb334fd3055fp3055is4334078 relayan7254rfd3055sm9a
|
PDF
|
RFP70N03
Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model
|
Original
|
rfp70n03rf1s70n03rf1s70n03smo-220ab+4175oco-262aa05e-4rf1s70n03sm9a
|
PDF
|
|
|
AN7254
Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI
|
Original
|
rf1k49154an7254an9321an9322+3ms-012aarf1k4915496tb334
|
PDF
|
HUF76445P3
Abstract: HUF76445S3S HUF76445S3ST TB334
Contextual Info: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer
|
Original
|
huf76445p3huf76445s3so-220abhuf76445s3st+1tb334
|
PDF
|
75307
Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
huf75307p3huf75307d3huf75307d3s75307+575307dtransistor 75307dhuf75307d3stta75307tb334
|
PDF
|
75337
Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
Contextual Info: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
hufa75337g3hufa75337p3hufa75337s3s75337+375337phufa75337s3sttb334
|
PDF
|
75307
Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
Contextual Info: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
hufa75307p3hufa75307d3hufa75307d3s75307+675307dtransistor 75307dhufa75307d3stta75307tb334ufa7
|
PDF
|
76423P
Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
Contextual Info: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S
|
Original
|
hufa76423p3hufa76423s3so-220abo-263ab+576423p76423shufa76423s3sttb33463e13
|
PDF
|
59E-1
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Contextual Info: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
|
Original
|
huf75309t3st59e-1an7254an7260+4an9321an9322tb334tb337
|
PDF
|
76633s
Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S
|
Original
|
huf76633p3huf76633s3so-220abo-263ab+776633s76633pan9321an9322huf76633s3sttb334mosfet 407
|
PDF
|
76629D
Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
Contextual Info: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw
|
Original
|
huf76629d3huf76629d3so-251aa76629d+4an9321huf76629d3sttb3344692
|
PDF
|
AN9321
Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Contextual Info: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
|
Original
|
hufa75831sk8ms-012aahufa75831slopmentan9321+2hufa75831sk8ttb370
|
PDF
|
