RFF60P06 Search Results

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

RFF60P06

Abstract: RFG60P06E
Contextual Info: RFF60P06 Data Sheet January 2002 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding

transistors 1UW

Abstract: transistors 1UW 18 p06e
Contextual Info: RFF60P06 21 H A R R 'S 25A+, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET Decem ber 1995 Features Package • 2 5 A t, 60V • TO-254AA r D S O N = 0 - 0 3 0 i 2 G A TE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

transistors 1UW

Contextual Info: RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum

RFF60P06

Abstract: RFG60P06E rfg60p06
Contextual Info: RFF60P06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V TO-254AA • rDS ON = 0.030Ω GATE SOURCE DRAIN • Temperature Compensating PSPICE Model

certificate of compliance jantx

Abstract: RFF60P06 RFG60P06E 8S1A rfg60p06
Contextual Info: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding

RFF60P06

Abstract: RFG60P06E EDS819
Contextual Info: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET Features Title FF6 06 bt A, V, 30 m, Chan- The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives

100V 60A Mosfet

Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Contextual Info: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: