1450PF Search Results

Contextual Info: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance

ATP112

Contextual Info: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Input Capacitance Ciss=1450pF(typ.) Halogen free compliance

Contextual Info: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive • • Input Capacitance Ciss=1450pF(typ.) Halogen free compliance

M4563

Abstract: ATP112
Contextual Info: ATP112 注文コード No. N A 1 7 5 4 三洋半導体データシート N ATP112 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=33mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=1450pF(typ.)

Contextual Info: ATP112 Ordering number : ENA1754A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.)

Contextual Info: ATP112 Ordering number : ENA1754A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.)

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

n312ad

Contextual Info: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

FQP45N03LT

Abstract: FQP45N03L
Contextual Info: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

N316AD

Contextual Info: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

Contextual Info: FQB60N03L N-Channel Logic Level MOSFETs 30V, 55A, 0.012Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

N316A

Contextual Info: ISL9N316AP3, ISL9N316AS3ST TM Data Sheet January 2001 File Number 30V, 0.0155 Ohm, 48A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

ISL9N316AP3

Abstract: ISL9N316AS3ST N316
Contextual Info: ISL9N316AP3/ISL9N316AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n312ad

Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
Contextual Info: ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

FST8460SL

Contextual Info: MCC FST8460SL
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU FST84100SL Features • • • • 80 Amp Schottky Barrier Rectifier 60 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

n312ad

Abstract: 69E-10
Contextual Info: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N312AS

Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST
Contextual Info: ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

ISL9N316AP3

Abstract: ISL9N316AS3ST N316A
Contextual Info: ISL9N316AP3/ISL9N316AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N312AP

Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST
Contextual Info: ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N312A

Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
Contextual Info: ISL9N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining

M043 Diode

Contextual Info: ISL9N316AD3ST TM Data Sheet January 2001 File Number 30V, 0.0155 Ohm, 48A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. 5025

FST8360SL

Contextual Info: MCC FST8360SL
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU FST83100SL Features • • • • 80 Amp Schottky Barrier Rectifier 60 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

N316AD

Abstract: ISL9N316AD3ST 8E11
Contextual Info: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching