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    Nisshinbo Micro Devices R3111N312A-TR-FE

    10V INPUT VOLTAGE DETECTOR - Tape and Reel (Alt: R3111N312A-TR-FE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas R3111N312A-TR-FE Tape & Reel 12 Weeks 3,000
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    Newark R3111N312A-TR-FE Tape & Reel 3,000
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    • 10000 $0.25
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    SKF TSN 312 A

    ACCESSORIES & HOUSINGS; TSN 312 A
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    RS TSN 312 A Bulk 3 Weeks 1
    • 1 $70.83
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    Siemens 3VA6210-5HN31-2AA0

    BRKR 3VA62 3P 100A 35KA ETU3-LSI 100
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    RS 3VA6210-5HN31-2AA0 Bulk 2 Weeks 1
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    Siemens 3VA6110-7HN31-2AA0

    BRKR 3VA61 3P 100A 100KA ETU3-LSI 100
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    RS 3VA6110-7HN31-2AA0 Bulk 2 Weeks 1
    • 1 $3567.59
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    Siemens 3VA6110-8HN31-2AA0

    BRKR 3VA61 3P 100A 150KA ETU3-LSI 100
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    RS 3VA6110-8HN31-2AA0 Bulk 2 Weeks 1
    • 1 $6707.00
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    Find more N312A price and stock on Findchips.com

    N312A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Contextual Info: N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		isl9n312ask8tisl9n312ask8ms-012aaan9321+3an9322tb334n312as PDF

    n312ad

    Contextual Info: PWM Optimized N312AD3ST/ N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		isl9n312ad3st/isl9n312ad31450pfo-252+2o-251aan312ad PDF

    u574

    Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
    Contextual Info: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16


    OCR Scan     		q8718iso-9001100mhz300mhz+13400mhz800mhz144/430mhzu574ic bl 176aif cable 8d-fbcoaxial cable 5d-2vb11g105j 250v2dlfmq 303ab177db176d PDF

    1HT251

    Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
    Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A


    OCR Scan     		fojo33kt357kt358kt361+16kt363kt364-2kt366kt368kt369kt369-11ht2512t203kt1171t3082t355a2t312it308bk1ht251kt117b2t313 PDF

    n312ad

    Abstract: TO-252AA Package N312A
    Contextual Info: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n312ad3st1450pfo-252n312ad+2to-252aa packagen312a PDF

    N317

    Abstract: n334 N-338 N-P-59U N333A coaxial 5D-2V N326 N306A N327 n329a
    Contextual Info: -Gfo, N CONNECTORS S in c e 1 9 7 8 ORDERING INFORMATION t N-301A-B S G T INSULATION D DELRIN T TEFLON P PLASTIC PB PBT POLYESTER PH PHENOLIC CONTACT PLATING C CHROME G GOLD N NICKEL S SILVER BODY PLATING C CHROME G GOLD N NICKEL -* S SILVER BODY MATERIAL


    OCR Scan     		n-301a-bn-301n-313n-325+15n-337n-302n-314n-326n-338n-303n317n334n-p-59un333acoaxial 5d-2vn326n306an327n329a PDF

    n312ad

    Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
    Contextual Info: N312AD3 / N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n312ad3isl9n312ad3st1450pfo-251aa+4o-252n312ad25e5 tube11a abs PDF

    n312ad

    Abstract: 69E-10
    Contextual Info: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n312ad3st1450pfo-252n312ad+169e-10 PDF

    N312AS

    Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST
    Contextual Info: N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n312ap3/isl9n312as3st1450pfo-263abo-220ab+5n312asn312apn312* transistorisl9n312ap3isl9n312as3st PDF

    N312AP

    Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST
    Contextual Info: N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		isl9n312ap3/isl9n312as3st1450pfo-263abo-220ab+5n312apn312asn312aisl9n312ap3isl9n312as3st PDF

    N312A

    Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
    Contextual Info: N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining


    Original     		isl9n312ask8tn312aisl9n312ask8an9321+2ms-012aatb334 PDF