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    N312AD Search Results

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    N312AD Price and Stock

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    Rochester Electronics LLC ISL9N312AD3

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N312AD3 Bulk 841
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    Rochester Electronics LLC ISL9N312AD3ST

    N-CHANNEL POWER MOSFET
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    DigiKey ISL9N312AD3ST Bulk 841
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    Fairchild Semiconductor Corporation ISL9N312AD3

    Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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    Rochester Electronics ISL9N312AD3 211,233 1
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    Fairchild Semiconductor Corporation ISL9N312AD3ST

    Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ISL9N312AD3ST 138,810 1
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    Fairchild Semiconductor Corporation ISL9N312AD3STNL

    50A, 30V, 0.012ohm, N-Channel Power MOSFET, TO-252AA
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    Rochester Electronics ISL9N312AD3STNL 150 1
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    N312AD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n312ad

    Contextual Info: PWM Optimized N312AD3ST/ N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N312AD3ST/ ISL9N312AD3 1450pF O-252 O-252) O-251AA) n312ad PDF

    n312ad

    Abstract: TO-252AA Package N312A
    Contextual Info: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N312AD3ST 1450pF O-252 n312ad TO-252AA Package N312A PDF

    n312ad

    Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
    Contextual Info: N312AD3 / N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N312AD3 ISL9N312AD3ST 1450pF O-251AA) O-252 O-252) n312ad ISL9N312AD3ST 25E5 tube 11A ABS PDF

    n312ad

    Abstract: 69E-10
    Contextual Info: N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N312AD3ST 1450pF O-252 n312ad 69E-10 PDF