AN9321
Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features
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N312AS
Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST
Contextual Info: ISL9N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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isl9n312ap3/isl9n312as3st1450pfo-263abo-220ab+5n312asn312apn312* transistorisl9n312ap3isl9n312as3st
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N312AP
Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST
Contextual Info: ISL9N312AP3/N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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N312A
Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
Contextual Info: N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining
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