8E11 Search Results

Contextual Info: 8E110 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 8 Load Current Max. (A)1.1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

Contextual Info: 8E110-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 8 Load Current Max. (A)1.1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

ISL9N307AP3

Abstract: ISL9N307AS3ST N307AS
Contextual Info: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n312ad

Contextual Info: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Contextual Info: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

MICROWAVE ASSOCIATES ISOLATOR

Abstract: AS218 transistor
Contextual Info: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and

1E5 MARKING

Abstract: XA2 marking
Contextual Info: DATA SHEET SMS392x Series: Surface Mount General Purpose Schottky Diodes Applications • High volume commercial detectors, mixers, switches, and digital pulse forming systems Features • Tight parameter distribution • Available as singles, pairs, and dual series pairs

Contextual Info: DATA SHEET SMS3925-079LF Low Capacitance, High Voltage Schottky Diode Applications • Wireless handsets and general purpose switching systems Features  Ultra-small SC-79 package  SC-79 package rated MSL1, 260 C per JEDEC J-STD-020 Skyworks offers lead Pb -free, RoHS (Restriction of

Hld050r

Abstract: HLD050R6M
Contextual Info: 0 .6 A Shindengen BEIAmerica, Inc. HL Series FEA TU RES • High Reliability ■ Thermal Protection ■ Small Packaging ■ Standard Output Voltage Adjustment With External Potentiometer Custom Control Chip Yields Compact Size with Low Cost No Heat Sink Required

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

8e1111

Abstract: Marvell PHY 88E1111 ml505 Marvell PHY 88E1111 Datasheet microblaze ethernet ML505 ML507 sgmii 88E1111 Marvell PHY 88E1111 Xilinx XAPP957 88E1111 and SFP applications
Contextual Info: Application Note: Virtex-5 Embedded Tri-Mode Ethernet Core R Virtex-5 Embedded Tri-Mode Ethernet MAC Hardware Demonstration Platform XAPP957 v1.1 October 8, 2008 Summary This application note describes a system using the Virtex -5 Embedded Tri-Mode Ethernet

Contextual Info: AR- 133 Rubidium Frequency Standard Ruggedized Low Profile AR-133 Applications Features • Long-term-stability: 5E-11/month • 2E-12 frequency accuracy & 100nSec 1PPS accuracy rela ve to 1PPS input when disciplined • Short term stability: 5E-12 @100s • Phase noise: -150dBc/Hz @10kHz

Contextual Info: DATA SHEET SMS392x Series: Surface Mount General Purpose Schottky Diodes Applications • High volume commercial detectors, mixers, switches, and digital pulse forming systems Features • Tight parameter distribution • Available as singles, pairs, and dual series pairs

Contextual Info: DATA SHEET SMS3925-079LF: Low Capacitance, High Voltage Schottky Diode Applications • Wireless handsets and general purpose switching systems Features • Ultra-small SC-79 package • SC-79 package rated MSL1, 260 °C per JEDEC J-STD-020 Description The SMS3925-079LF is a 40 V, 0.6 pF RF Schottky diode

7030BL

Abstract: 5S1A
Contextual Info: ISL9N7030BLP3, ISL9N7030BLS3ST TM Data Sheet January 2001 File Number 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

35KP

Abstract: FQB95N03L
Contextual Info: FQB95N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

Contextual Info: SGMII and Gb Ethernet PCS IP Core User’s Guide April 2014 IPUG60_02.1 Table of Contents Chapter 1. Introduction . 4 Quick Facts . 4

SMS3925-040LF

Abstract: SMS3925-079LF
Contextual Info: DATA SHEET SMS3925-040LF: 0402 Surface Mount Medium Barrier Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Low barrier height • Industry-standard 0402 footprint • Packages rated MSL1, 260 °C per JEDEC J-STD-020

853e16

Abstract: CSR BC4 8C701 82C316 CSR BC5 SRF 7016 804016 844016 BC5 CSR bc6 csr
Contextual Info: M306V8FJFP REJ03B0082-0131 Rev.1.31 Apr 18, 2005 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION The M306V8FJFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 116-pin plastic molded QFP. These single-chip

Contextual Info: Preliminary Low Capacitance High Voltage Schottky Diode SMS3925-079 Features • Silicon Schottky Diode for Detector Applications ■ Ultra Small SC-79 Package ■ Designed for High Volume, Low Cost Applications ■ Available in Tape and Reel Packaging Description