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    ISL9N307AP3

    Abstract: ISL9N307AS3ST N307AS
    Contextual Info: ISL9N307AP3/N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N307AP3/ISL9N307AS3ST 3000pF O-263AB O-220AB ISL9N307AP3 ISL9N307AS3ST N307AS PDF

    N307AS

    Abstract: ISL9N307AP3 ISL9N307AS3ST
    Contextual Info: ISL9N307AP3/N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N307AP3/ISL9N307AS3ST 3000pF O-263AB O-220AB N307AS ISL9N307AP3 ISL9N307AS3ST PDF