DPDS Search Results

DHC8-P85

Abstract: C82C55A I82C55A M82C55A
Contextual Info: ;•. > 1 ÏS S ÏÎS ! UAL A DUAL PARALLEL PORT INTERFACE MODULE WWhite DHC8-DPDS SERIES Technology, Inc. Advance Information 001609 FEATURES • 200° C Operating Temperature • • • • • Two Separate Serial Ports Two Separate Parallel Ports Single 5 Volt Power Supply

Contextual Info: DUAL PARALLEL PORT INTERFACE MODULE DHC8-DPDS SERIES W W hite Technology, Inc. C 7-1 J '• Advance Information '< ; 001609 : /ix-.' :"' FEATURES • 200° C Operating Temperature • • • • • Two Separate Serial Ports Two Separate Parallel Ports Single 5 Volt Power Supply

sdc 603

Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
Contextual Info: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

Si4200-BM

Abstract: Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm
Contextual Info: Aero A E R O T R A N S C E I V E R F O R GSM A N D G PR S WIRELESS COMMUNICATIONS Features Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32 Si4201: 4 x 4 mm QFN20 Si4133T: 5 x 5 mm QFN28

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: ATmega256/128/64RFR2 Features • • • • • • • • • • • • • • • • • • Network support by hardware assisted Multiple PAN Address Filtering Advanced Hardware assisted Reduced Power Consumption High Performance, Low Power AVR 8-Bit Microcontroller

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4

dax6

Abstract: Mobile SDRAM
Contextual Info: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array

Contextual Info: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)

46LR32640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

V56C1512164MD

Contextual Info: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 400 MHz 333 MHz 266 MHz 200 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -

HYE18L512320BF-7.5

Abstract: HYB18L512320BF-7.5
Contextual Info: Data Sheet, Rev.1.2, April 2005 HYB18L512320BF-7.5 HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

Contextual Info: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.

P-VFBGA 49 package

Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1
Contextual Info: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision

Contextual Info: ESM T M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE

HYB25L512160AC

Abstract: HYE25L512160AC
Contextual Info: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04

ATMEGA128RFA1

Abstract: Atmega1281 hardware guide 180v dc motor speed control schematic AT86RF231 CRC-16 SP100 SP11 SP12 SP13 SP14
Contextual Info: ATmega128RFA1 Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture - 135 Powerful Instructions – Most Single Clock Cycle Execution - 32x8 General Purpose Working Registers - Fully Static Operation - Up to 16 MIPS Throughput at 16 MHz and 1.8V

46LR16640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR32640A

Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
Contextual Info: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR16320C

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: ESM T M53D256328A 2F (Preliminary) Mobile DDR SDRAM 2M x 32 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE

Contextual Info: Aero A E R O TR A N S C E I V E R FOR GSM AND GPRS WIRELESS COMMUNICATIONS Features „ GND NC NC GND VDD RFOG 25 24 RFOD 23 VDD IOP 2 CKN 3 CKP 4 TXIP 5 TXIN 6 19 RFIDP TXQP 7 18 RFIPN 22 RFIGN 17 RFIPP 9 10 11 12 13 SCLK SEN 19 18 17 16 2 15 SDO RXQN

Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for