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    DIRECTED ENERGY Search Results

    DIRECTED ENERGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-SFPP2EPASS-000.5
    		Amphenol Cables on Demand Amphenol SF-SFPP2EPASS-000.5 0.5m SFP+ Cable - Amphenol 10GbE SFP+ Direct Attach Copper Cable (1.6 ft) PDF
    SF-SFPP2EPASS-003
    		Amphenol Cables on Demand Amphenol SF-SFPP2EPASS-003 3m SFP+ Cable - Amphenol 10GbE SFP+ Direct Attach Copper Cable (9.8 ft) PDF
    SF-SFPP2EPASS-001
    		Amphenol Cables on Demand Amphenol SF-SFPP2EPASS-001 1m SFP+ Cable - Amphenol 10GbE SFP+ Direct Attach Copper Cable (3.3 ft) PDF
    SF-SFPP2EPASS-005
    		Amphenol Cables on Demand Amphenol SF-SFPP2EPASS-005 5m SFP+ Cable - Amphenol 10GbE SFP+ Direct Attach Copper Cable (16.4 ft) PDF
    SF-SFPP2EPASS-007
    		Amphenol Cables on Demand Amphenol SF-SFPP2EPASS-007 7m SFP+ Cable - Amphenol 10GbE SFP+ Direct Attach Copper Cable (23 ft) PDF

    DIRECTED ENERGY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


    Original     		PDF

    DE-150

    Abstract: z diode 14a
    Contextual Info: 2849995 DIRECTED ENERGY I NC ~~T7 97D 00006 D eT| 20 4=1^5 □□□ODOfc, 3 J “ DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. DE-150 10IN14 SPECIFICATIONS PULSED POWER COMPONENTS AND SYSTEMS The Centre for Advanced Technology 2301 Research Blvd., Suile 101


    OCR Scan     		DE-150 10IN14 -J-35TI z diode 14a PDF

    DE275-102N06X2A

    Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
    Contextual Info: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate


    Original     		PRF-1150 56MHz DEIC420 DE275X2-102N06A 0-471-03018-X DE275-102N06X2A 102n06x2a amplifier circuit diagram class D 1000w circuit diagram of 13.56MHz RF Generator plasma DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz PDF

    Rudy Severns

    Abstract: mospower applications handbook 3RH1140-1AD00 DE-150 DE-275 DE-375 Directed Energy "mospower applications handbook"
    Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE The destructive effects of Kelvin leaded packages in high speed, high frequency operation Directed Energy, Inc. • 2401 Research Blvd., Ste 108 • Fort Collins, CO 80526 TEL: 970-493-1901 • FAX: 970-493-1903 • EMAIIL: deiinfo@directedenergy.com • WEB: www.directedenergy.com


    Original     		DE-275 Rudy Severns mospower applications handbook 3RH1140-1AD00 DE-150 DE-375 Directed Energy "mospower applications handbook" PDF

    mospower applications handbook

    Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
    Contextual Info: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode


    Original     		PDF

    k 2645 MOSFET

    Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
    Contextual Info: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology


    OCR Scan     		00DDD14 DE-150 45IP02 -450V, 00A/p> k 2645 MOSFET CD 4511 data sheet Directed Energy "free energy" circuit k 2645 PDF

    DE-275

    Contextual Info: r. . DIRECTED °t pr.nTrn ENERGY INC rucpfiv TM O _ 9 7 P > fi D ti ? 3 ^ DEB 2 f DE-275 SERIES □ DATA SlÆ rl DIRECTED ENERGY, IN C. PULSED POWER COMPONENTS AND SYSTEMS D T'"'"' jf i-/ l t n T T S ^ 0 0 D D 2 3 3 |~ • DE-275 10IP12 SPECIFICATIONS 4 The Centre for Advanced Technology


    OCR Scan     		DE-275 GGGDD23 10IP12 PDF

    301N35

    Abstract: DE-375
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-375 301N35 35A, 300V, 0.10Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-375 301N35 150oC 301N35 PDF

    102N02

    Abstract: DE-150
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 102N02 1.4A, 1000V, 11Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-150 102N02 150oC 102N02 PDF

    201N09

    Abstract: DE-150
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 201N09 9A, 200V, 0.40Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-150 201N09 150oC 201N09 PDF

    501N04

    Abstract: DE-150-501N04 DE-150
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-150 501N04 150oC 501N04 DE-150-501N04 PDF

    501N16

    Abstract: DE-275
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-275 501N16 16A, 500V, 0.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-275 501N16 150oC 501N16 PDF

    DE275-102N06A

    Abstract: DE375-102N10A DE375-501N16A
    Contextual Info: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.


    Original     		DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A PDF

    Directed Energy

    Abstract: 201N25 DE-275
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-275 201N25 25A, 200V, 0.08Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-275 201N25 150oC Directed Energy 201N25 PDF

    501N40

    Contextual Info: PRELIMINARY SPECIFICATION DE-375X2 501N40 40A, 500V, 0.120Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-375X2 501N40 150oC 501N40 PDF

    nec 2401

    Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
    Contextual Info: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


    Original     		DE150-101N09A 1100P nec 2401 QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09 PDF

    DE-150

    Abstract: 12S100 Directed Energy suhl
    Contextual Info: - - 9 7 D DIRECTE» ENERGY INC ^ nnnnn n » E | S f l M t:icn S T'-' 2 / OODDOOfl 7 | DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. 4 ^ DE-150 20IP05 SPECIFICATIONS % PULSED POWER COMPONENTS AND SYSTEMS The Centre or Advanced Technology


    OCR Scan     		DE-150 20IP05 -200V. 201P05 12S100 Directed Energy suhl PDF

    nec 2401

    Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
    Contextual Info: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		DE475-102N20A nec 2401 1000 volt mosfet Directed Energy 400P DE475-102N20A PDF

    nec 2401

    Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
    Contextual Info: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04 PDF

    IXAN0051

    Abstract: PW 2N IXDP610 pw-2n IXDP610A
    Contextual Info: IXAN0051 DIRECTED ENERGY, INC. TECHNICAL NOTE GENERATING PWM WAVEFORMS USING THE IXDP610A Abstract The IXDP610 is a digital pulse width modulator that is targeted for microcontroller and microprocessor based systems used for switching power bridge applications, PWM controlled current or voltage sources, and other


    Original     		IXAN0051 IXDP610A IXDP610 IXAN0051 PW 2N pw-2n IXDP610A PDF

    nec 2401

    Abstract: Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed
    Contextual Info: Directed Energy, Inc. An DE150-201N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR


    Original     		DE150-201N09A 1100P nec 2401 Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed PDF

    nec 2401

    Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice
    Contextual Info: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		DE150-102N02A 500Pf nec 2401 DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice PDF

    400P

    Abstract: DE475-501N44A Directed Energy
    Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		DE475-501N44A 30MHz 400P DE475-501N44A Directed Energy PDF

    400P

    Abstract: DE475-102N21A
    Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		DE475-102N21A 30MHz 400P DE475-102N21A PDF