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501N21 Datasheets (1)

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Directed Energy

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
501N21		Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF	36.01KB	1

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TDK Corporation B82722A2501N21 Current-Compensated Ring Core Double Choke 39mH 0.5A 1120mOhm 30% Radial Leaded Tray - Trays (Alt: B82722A2501N021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	B82722A2501N21	Tray		9 Weeks	600	1 - 10 - 100 - 1000 $1.75 10000 $1.25	Buy Now
TDK Corporation B82721K2501N21 - Trays (Alt: B82721K2501N021)
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Avnet Americas	B82721K2501N21	Tray		9 Weeks	720	1 - 10 - 100 - 1000 $1.57 10000 $1.13	Buy Now
Avnet Abacus	B82721K2501N21			143 Weeks	720	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Corporation B82722J2501N21 - Trays (Alt: B82722J2501N021)
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Avnet Americas	B82722J2501N21	Tray		27 Weeks	540	1 - 10 - 100 - 1000 $1.75 10000 $1.25	Buy Now
Avnet Abacus	B82722J2501N21			29 Weeks	540	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Corporation B82721A2501N21 - Trays (Alt: B82721A2501N021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	B82721A2501N21	Tray		9 Weeks	600	1 - 10 - 100 - 1000 $1.57 10000 $1.13	Buy Now
Avnet Abacus	B82721A2501N21			143 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Electronics B82721K2501N21
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Bristol Electronics	B82721K2501N21		2,154		1	1 $3.00 10 $2.25 100 $1.86 1000 $0.99 10000 $0.99	Buy Now

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501N21 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DE375-501N21A Abstract: "RF MOSFETs" 400P Contextual Info: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	de375-501n21a 50mhz rf mosfets 400p	PDF
Directed Energy Abstract: 501N21 DE-375 Contextual Info: PRELIMINARY SPECIFICATIONS DE-375 501N21 21A, 500V, .25Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	de-375 501n21 150oc directed energy	PDF
400P Abstract: DE375-501N21A mosfet SPICE MODEL Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	de375-501n21a 50mhz 400p mosfet spice model	PDF
DE375-501N21A Abstract: 400P PIN diode SPICE model Contextual Info: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	de375-501n21a 50mhz 400p pin diode spice model	PDF
mospower applications handbook Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics Contextual Info: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101	OCR Scan	00d0113 and01n 201p11-00 101n30-00 +14p12-00 de-375 -59s--102n11-00 501n21-00 mospower applications handbook mosfet power inverter 600w circuit diagram hexfet power mosfet designer manual rudy severns 02n05 siliconix handbook 501n04 mosfet designer manual gate drive characteristics	PDF
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	de-150 110mhz de-375x2 102n20 +10501n40 high power rf 10kw hf power amplifier 1000w de-275 rf amplifiers 101n09 hf amplifier 1000w 3rh1140-1ad00 101n30 102n02	PDF
501N04 Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05 Contextual Info: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device	OCR Scan	de-150 110mhz 501n04 30mhz +11de-375 102n10 501n21 de-275 101n30 5kw power amplifier amplifier 1000w 8 101n09 de-275 directed energy 101n30 102n05	PDF