nec 2401
Abstract: DE150-101N09A PIN diode SPICE model 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient
|
Original
|
DE150-101N09A
1100P
nec 2401
DE150-101N09A
PIN diode SPICE model
101N09A
|
PDF
|
PIN diode SPICE model
Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100
|
Original
|
DE150-101N09A
101N09A
1100P
PIN diode SPICE model
DE150-101N09A
rf power mosfet
1n spice
|
PDF
|
nec 2401
Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
Contextual Info: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR
|
Original
|
DE150-101N09A
1100P
nec 2401
QGS 80W 30 ohm
Directed Energy
DE150-101N09A
201N09
|
PDF
|
DE-150-101N09
Abstract: 101N09 Directed Energy DE-150
Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 101N09 9A, 100V, 0.16Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com
|
Original
|
DE-150
101N09
250mA
150oC
SP101N09
DE-150-101N09
101N09
Directed Energy
|
PDF
|
high power rf 10kW
Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order
|
Original
|
DE-150
DE-150
110MHz.
DE-375X2
102N20
501N40
high power rf 10kW
HF power amplifier 1000W
DE-275
RF Amplifiers
101N09
hf amplifier 1000w
3RH1140-1AD00
101N30
102N02
|
PDF
|
501N04
Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
Contextual Info: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device
|
OCR Scan
|
DE-150
110MHz.
501N04
30MHz.
DE-375
102N10
501N21
DE-275 101N30
5kw power amplifier
amplifier 1000W 8
101N09
DE-275
Directed Energy
101N30
102N05
|
PDF
|
DE275-101N30A
Abstract: DE-275-101N30 de275 PIN diode SPICE model
Contextual Info: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient
|
Original
|
DE275-101N30A
101N09A
1100P
DE275-101N30A
DE-275-101N30
de275
PIN diode SPICE model
|
PDF
|
mospower applications handbook
Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
Contextual Info: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode
|
Original
|
|
PDF
|