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    101N30 Datasheets (1)

    Directed Energy
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    101N30
    		Directed Energy DE-SERIES FAST POWER MOSFET Original PDF 37.02KB 1
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    101N30 Price and Stock

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    ABLIC Inc. S-19101N30A-N4T2U

    - Tape and Reel (Alt: S-19101N30A-N4T2U)
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    Avnet Americas S-19101N30A-N4T2U Tape & Reel 24 Weeks 3,000
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    ABLIC Inc. S-19101N30A-M5T2U

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    Avnet Americas S-19101N30A-M5T2U Tape & Reel 24 Weeks 3,000
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    Nisshinbo Micro Devices RP101N301B-TR-FE

    LOW NOISE, 0.6% ACCURACY, 300MA LDO REGULATOR - Tape and Reel (Alt: RP101N301B-TR-FE)
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    Newark RP101N301B-TR-FE Tape & Reel 3,000
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    Nisshinbo Micro Devices RP101N301D-TR-FE

    LOW NOISE, 0.6% ACCURACY, 300MA LDO REGULATOR - Tape and Reel (Alt: RP101N301D-TR-FE)
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    Setra Systems Inc. 3101N300PG028

    PRESSURE SENSOR, 3101.5-4.5V 300PG 1/4NPTE DT04
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    101N30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DE-275 101N30

    Abstract: Directed Energy 101N30 DE-275
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-275 101N30 30A, 100V, 0.05Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		de-275101n30250ma150oc+2de-275 101n30directed energy PDF

    DE275-101N30A

    Abstract: DE-275-101N30 de275 PIN diode SPICE model
    Contextual Info: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient


    Original     		de275-101n30a101n09a1100pde-275-101n30+2de275pin diode spice model PDF

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Contextual Info: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		00d0113and01n201p11-00101n30-00+14p12-00de-375-59s--102n11-00501n21-00mospower applications handbookmosfet power inverter 600w circuit diagramhexfet power mosfet designer manualrudy severns02n05siliconix handbook501n04mosfet designer manualgate drive characteristics PDF

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		de-150110mhzde-375x2102n20+10501n40high power rf 10kwhf power amplifier 1000wde-275rf amplifiers101n09hf amplifier 1000w3rh1140-1ad00101n30102n02 PDF

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Contextual Info: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


    OCR Scan     		de-150110mhz501n0430mhz+11de-375102n10501n21de-275 101n305kw power amplifieramplifier 1000w 8101n09de-275directed energy101n30102n05 PDF