102N20 Search Results

102N20 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
102N20		Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF	36.33KB	1

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TDK Corporation B82722A2102N020 Common Mode Chokes / Filters RING CORE CHOKE 2x15mH 1A +60 C
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Mouser Electronics	B82722A2102N020					1 - 10 - 100 - 1000 $1.31 10000 $1.31	Get Quote
TDK Corporation B82722J2102N020 Common Mode Chokes / Filters RING CORE CHOKE 2x15mH 1A +60 C
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Mouser Electronics	B82722J2102N020					1 - 10 - 100 - 1000 $1.38 10000 $1.34	Get Quote
Nisshinbo Micro Devices RP102N201D-TR-FE LDO Voltage Regulators 0.8% Vout Accuracy LDO Regulator with PSRR 80dB
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Mouser Electronics	RP102N201D-TR-FE					1 - 10 - 100 - 1000 - 10000 $0.40	Get Quote
IXYS Corporation IXTH102N20T MOSFETs 102 Amps 200V 22 Rds
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Mouser Electronics	IXTH102N20T					1 - 10 - 100 $4.81 1000 $3.45 10000 $2.96	Get Quote
ABLIC Inc. S-19102N20H-M5T1U Supervisory Circuits
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Mouser Electronics	S-19102N20H-M5T1U					1 - 10 - 100 - 1000 - 10000 $0.57	Get Quote

102N20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
102N20 Abstract: 3RH1140-1AD00 Directed Energy Contextual Info: PRELIMINARY SPECIFICATIONS DE-375X2 102N20 20A, 1000V, 0.6Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-375X2 102N20 150oC 102N20 3RH1140-1AD00 Directed Energy	PDF
nec 2401 Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A Contextual Info: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	DE475-102N20A nec 2401 1000 volt mosfet Directed Energy 400P DE475-102N20A	PDF
mosfet 62N Abstract: 400P DE475-102N20A 102N20 Contextual Info: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE475-102N20A mosfet 62N 400P DE475-102N20A 102N20	PDF
nec 2401 Abstract: 102N20 400P DE475-102N20A PIN diode SPICE model Contextual Info: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE475-102N20A nec 2401 102N20 400P DE475-102N20A PIN diode SPICE model	PDF
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF