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    102N10 Search Results

    102N10 Datasheets (1)

    Directed Energy
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    102N10
    Directed Energy DE-SERIES FAST POWER MOSFET Original PDF 36.01KB 1
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    ABLIC Inc. S-19102N10H-M5T1U

    - Tape and Reel (Alt: S-19102N10H-M5T1U)
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    Avnet Americas S-19102N10H-M5T1U Tape & Reel 24 Weeks 3,000
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    Electro Switch Corporation M5D0102N-1004

    Rotary Switch; |Electroswitch M5D0102N-1004
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    IDEC Corporation ASD2102N-104

    30MM SELECTOR SWITCH
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    SMC Corporation of America FN1102N-10-S005

    FILTER, INDUSTRIAL, LOW MAINTENANCE, 500MM CYLINDRICAL 5 MIC ELEMENT, NBR SEAL
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    SMC Corporation of America FN1102N-10-S020

    FILTER, INDUSTRIAL, LOW MAINTENANCE, 500MM CYLINDRICAL 20 MIC ELEMENT, NBR SEAL
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    102N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nec 2401

    Abstract: 400P DE375-102N10A Directed Energy
    Contextual Info: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original
    de375-102n10anec 2401400pdirected energy PDF

    DE375-102N10A

    Contextual Info: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original
    de375-102n10a PDF

    DE-375-102N10

    Abstract: 102N10 DE-375
    Contextual Info: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


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    de-375102n10150ocde-375-102n10 PDF

    nec 2401

    Abstract: DE375-102N10A "RF MOSFETs" 400P
    Contextual Info: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original
    de375-102n10anec 2401rf mosfets400p PDF

    DE275-102N06A

    Abstract: DE375-102N10A DE375-501N16A
    Contextual Info: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.


    Original
    de375-501n16ade275-102n06ade375-102n10a PDF

    DE375-0001

    Abstract: DE375-102N10A nec 2401 400P DE-375-102N10
    Contextual Info: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


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    de375-102n10ade375-0001nec 2401400p+1de-375-102n10 PDF

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


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    56mhzde375-102n12adeic4200-471-03018-x+1013.56mhz 3kw generator3kw generatormosfet 5kw high power rf5kw switching power supply designhigh frequency 5kw power transformercircuit diagram of 13.56mhz rf generatormosfet 3kw3kw and 5kw half-bridge class-d rf generators3kw mosfetequivalent circuit of power transformer 11kv PDF

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


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    de-150110mhzde-375x2102n20+10501n40high power rf 10kwhf power amplifier 1000wde-275rf amplifiers101n09hf amplifier 1000w3rh1140-1ad00101n30102n02 PDF

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Contextual Info: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


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    de-150110mhz501n0430mhz+11de-375102n10501n21de-275 101n305kw power amplifieramplifier 1000w 8101n09de-275directed energy101n30102n05 PDF

    mospower applications handbook

    Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
    Contextual Info: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode


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    mospower applications handbookasc capacitorrudy severnssiliconix handbook+5service manual lg r500fps-4ninverter lg ig drive p147r1620mhz PDF